stn4972s8tg Stanson Technology Co., Ltd., stn4972s8tg Datasheet - Page 2
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stn4972s8tg
Manufacturer Part Number
stn4972s8tg
Description
Dual N Channel Enhancement Mode Mosfet
Manufacturer
Stanson Technology Co., Ltd.
Datasheet
1.STN4972S8TG.pdf
(7 pages)
ABSOULTE MAXIMUM RATINGS (Ta = 25 ℃ Unless otherwise noted )
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(TJ=150 ℃ )
Pulsed Drain Current
Continuous Source Current
(Diode Conduction)
Power Dissipation
Operation Junction Temperature
Storgae Temperature Range
Thermal Resistance-Junction to Ambient
Parameter
T
T
T
T
A
A
A
A
=25℃
=70 ℃
=25℃
=70 ℃
Dual N Channel Enhancement Mode MOSFET
Symbol
V
V
R
T
I
P
I
T
DSS
GSS
I
STG
θ JA
DM
D
S
D
J
STN4972
-55/150
-55/150
Typical
Copyright © 2007, Stanson Corp.
± 20
8.5
7.5
2.3
2.5
1.6
30
25
80
STN4972 2008. V1
8.5A
Unit
℃ /W
W
℃
℃
V
A
V
A
A