ntd4810n ON Semiconductor, ntd4810n Datasheet - Page 5

• Manufacturer Part Number: ntd4810n
• Description: Power Mosfet 30 V, 54 A, Single N-channel, Dpak/ipak
• Manufacturer: ON Semiconductor

1000
1000
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
100
100
2000
1500
1000
10
0.1
10
500
1
1
0
1
0.1
10
V
I
V
D
Figure 11. Maximum Rated Forward Biased
C
C
DD
GS
rss
= 30 A
iss
V
V
SINGLE PULSE
T
DS
= 15 V
= 11.5 V
V
t
t
C
d(on)
GS
Figure 9. Resistive Switching Time
d(off)
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
5
= 25°C
t
t
r
f
= 20 V
V
Variation vs. Gate Resistance
Figure 7. Capacitance Variation
= 0 V
R
GS
G
, GATE RESISTANCE (OHMS)
R
THERMAL LIMIT
PACKAGE LIMIT
DS(on)
Safe Operating Area
0
1
V
GS
V
C
DS
LIMIT
rss
= 0 V
5
10
10
10
TYPICAL PERFORMANCE CURVES
15
T
J
10 ms
1 ms
100 ms
10 ms
dc
20
= 25°C
http://onsemi.com
C
C
NTD4810N
oss
iss
100
100
25
5
100
110
12
10
11
30
25
20
15
10
90
80
70
60
50
40
30
20
10
9
8
7
6
5
4
3
2
1
0.5
0
5
0
0
25
0
Figure 8. Gate-To-Source and Drain-To-Source
Figure 10. Diode Forward Voltage vs. Current
1 2 3 4
V
Figure 12. Maximum Avalanche Energy vs.
T
Q
GS
J
V
1
= 25°C
SD
= 0 V
50
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Starting Junction Temperature
0.6
T
J
Q
5
, JUNCTION TEMPERATURE (°C)
Q
G
Voltage vs. Total Charge
2
6 7 8 9
, TOTAL GATE CHARGE (nC)
75
0.7
10
100
Q
111213 141516 171819 202122
T
0.8
125
I
0 V < V
T
D
J
= 30 A
= 25°C
GS
0.9
I
D
150
< 11.5 V
= 14 A
175
1.0