ntd4865n ON Semiconductor, ntd4865n Datasheet - Page 3
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ntd4865n
Manufacturer Part Number
ntd4865n
Description
Power Mosfet 25 V, 44 A, Single N-channel, Dpak/ipak
Manufacturer
ON Semiconductor
Datasheet
1.NTD4865N.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ntd4865nT4G
Manufacturer:
ON
Quantity:
12 500
ELECTRICAL CHARACTERISTICS
DRAIN-SOURCE DIODE CHARACTERISTICS
PACKAGE PARASITIC VALUES
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Source Inductance
Drain Inductance, DPAK
Drain Inductance, IPAK
Gate Inductance
Gate Resistance
Parameter
(T
J
= 25°C unless otherwise specified)
Symbol
V
Q
t
R
L
L
L
L
RR
t
t
SD
a
b
RR
G
S
D
D
G
http://onsemi.com
NTD4865N
V
GS
V
I
3
GS
S
= 0 V, dIS/dt = 100 A/ms,
= 30 A
= 0 V,
Test Condition
T
I
S
A
= 30 A
= 25°C
T
T
J
J
= 125°C
= 25°C
Min
0.0164
0.89
10.6
2.49
1.88
3.46
0.75
Typ
1.0
7.0
3.6
1.7
Max
1.2
Unit
nH
ns
nC
W
V