ntd20n06l ON Semiconductor, ntd20n06l Datasheet

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ntd20n06l

Manufacturer Part Number
ntd20n06l
Description
Power Mosfet 20 Amps, 60 Volts, Logic Level
Manufacturer
ON Semiconductor
Datasheet

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NTD20N06L
Power MOSFET
20 Amps, 60 Volts
Logic Level, N−Channel DPAK
power supplies, converters and power motor controls and bridge
circuits.
Features
Typical Applications
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 1 in pad size, (Cu Area 1.127 in
2. When surface mounted to an FR4 board using recommended pad size,
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 2
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
Gate−to−Source Voltage
Drain Current
Total Power Dissipation @ T
Derate above 25°C
Total Power Dissipation @ T
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
(V
L = 1.0 mH, I
Thermal Resistance
Maximum Lead Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
Designed for low voltage, high speed switching applications in
Pb−Free Packages are Available
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
(Cu Area 0.412 in
DD
= 25 Vdc, V
L
(pk) = 16 A, V
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
− Continuous
− Non−repetitive (t
− Continuous @ T
− Continuous @ T
− Single Pulse (t
GS
Rating
J
2
= 5.0 Vdc,
).
= 25°C
(T
J
GS
= 25°C unless otherwise noted)
DS
A
A
A
= 10 MW)
= 25°C
= 25°C (Note 1)
= 25°C (Note 2)
= 60 Vdc)
p
v10 ms)
A
A
p
v10 ms)
= 25°C
= 100°C
Symbol
T
V
V
R
R
R
J
V
V
E
I
P
DGR
, T
T
DSS
I
I
DM
qJC
qJA
qJA
GS
GS
D
D
AS
D
L
stg
−55 to
Value
+175
"15
"20
0.40
1.88
1.36
128
260
110
2.5
60
60
20
10
60
60
80
1
W/°C
°C/W
Unit
Vdc
Vdc
Vdc
Adc
Apk
mJ
°C
°C
W
W
W
2
).
1 2
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
1
V
2
(BR)DSS
3
60 V
3
Y
WW
20N6L
G
ORDERING INFORMATION
4
4
G
http://onsemi.com
(Surface Mount)
(Straight Lead)
CASE 369C
CASE 369D
39 mW@5.0 V
STYLE 2
STYLE 2
R
N−Channel
DPAK
DPAK
DS(on)
= Year
= Work Week
= Device Code
= Pb−Free Package
D
Publication Order Number:
MARKING DIAGRAMS
& PIN ASSIGNMENTS
S
TYP
Gate
Gate
1
1
NTD20N06L/D
Drain
Drain
Drain
Drain
4
2
4
2
(Note 1)
I
D
20 A
MAX
3
Source
3
Source

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ntd20n06l Summary of contents

Page 1

... PIN ASSIGNMENTS 4 Drain 4 DPAK CASE 369C (Surface Mount) STYLE Drain Gate Source 4 Drain 4 DPAK CASE 369D (Straight Lead) STYLE Gate Drain Source Y = Year WW = Work Week 20N6L = Device Code G = Pb−Free Package ORDERING INFORMATION Publication Order Number: NTD20N06L/D ...

Page 2

... Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device NTD20N06L NTD20N06LG NTD20N06L−1 NTD20N06L−1G NTD20N06LT4 NTD20N06LT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTD20N06L (T = 25°C unless otherwise noted) J Symbol ...

Page 3

... Gate−to−Source Voltage 1.8 GS 1.6 1.4 1.2 1 0.8 0.6 −50 − JUNCTION TEMPERATURE (°C) J Figure 5. On−Resistance Variation with Temperature NTD20N06L 40 ≥ 4 3 100° 1 GATE−TO−SOURCE VOLTAGE (VOLTS) GS Figure 2. Transfer Characteristics 0.085 V ...

Page 4

... GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) NTD20N06L POWER MOSFET SWITCHING The capacitance (C a voltage corresponding to the off−state condition when calculating t on−state when calculating t At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET ...

Page 5

... T )/(R ). qJC J(MAX Power MOSFET designated E−FET can be safely used in switching circuits with unclamped inductive loads. For NTD20N06L 1000 100 GS ...

Page 6

... V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating Area 1 0.5 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE 0.01 0.00001 0.0001 I Figure 14. Diode Reverse Recovery Waveform NTD20N06L SAFE OPERATING AREA 140 10 ms 120 100 100 STARTING JUNCTION TEMPERATURE (°C) J Figure 12. Maximum Avalanche Energy versus ...

Page 7

... 0.13 (0.005) M 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTD20N06L PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O SEATING −T− PLANE SOLDERING FOOTPRINT* 6 ...

Page 8

... K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTD20N06L/D ...

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