ntd24n06 ON Semiconductor, ntd24n06 Datasheet

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ntd24n06

Manufacturer Part Number
ntd24n06
Description
Power Mosfet 60 V, 24 A, N-channel Dpak
Manufacturer
ON Semiconductor
Datasheet

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NTD24N06
Power MOSFET
60 Volt, 24 Amp
N−Channel DPAK
power supplies, converters and power motor controls and bridge
circuits.
Features
Typical Applications
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR−4 board using the 0.5 sq in drain pad size.
2. When surface mounted to an FR−4 board using the minimum recommended
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 4
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
Gate−to−Source Voltage
Drain Current
Total Power Dissipation @ T
Total Power Dissipation @ T
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
(V
L = 1.0 mH, I
Thermal Resistance
Maximum Lead Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
Designed for low voltage, high speed switching applications in
Pb−Free Packages are Available
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
pad size.
DD
Derate above 25°C
− Continuous @ T
− Continuous @ T
− Continuous @ T
− Single Pulse (t
= 50 Vdc, V
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
L
(pk) = 18 A, V
GS
− Continuous
− Non−repetitive (t
Rating
J
= 10 Vdc,
= 25°C
p
v10 ms), T
A
A
A
(T
= 25°C, T
= 25°C, T
= 100°C, T
J
GS
= 25°C unless otherwise noted)
DS
A
A
A
= 10 MW)
= 25°C
= 25°C (Note 1)
= 25°C (Note 2)
= 60 Vdc)
J
J
J
= 175°C
J
p
= 150°C
= 175°C
v10 ms)
= 175°C
Symbol
T
V
V
R
R
R
J
V
V
E
I
P
DGR
, T
T
DSS
I
I
I
DM
qJC
qJA
qJA
GS
GS
D
D
D
AS
D
L
stg
−55 to
Value
+175
"20
"30
62.5
0.42
1.88
1.36
162
260
110
2.4
60
60
24
27
19
80
80
1
W/°C
°C/W
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Apk
mJ
°C
°C
W
W
W
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
V
(Surface Mount)
(BR)DSS
(Straight Lead)
60 V
CASE 369C
CASE 369D
1 2
1
STYLE 2
STYLE 2
2
DPAK
DPAK
Y
WW
24N06
G
ORDERING INFORMATION
3
3
G
http://onsemi.com
4
4
R
N−Channel
DS(on)
32 mW
= Year
= Work Week
= Device Code
= Pb−Free Package
D
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Publication Order Number:
TYP
S
Gate
Gate
1
1
Drain
Drain
Drain
Drain
4
2
4
2
NTD24N06/D
3
Source
3
Source
I
D
24 A
MAX

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ntd24n06 Summary of contents

Page 1

... A N−Channel MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 3 DPAK Drain Gate Source STYLE Drain DPAK Gate Drain Source STYLE Year WW = Work Week 24N06 = Device Code G = Pb−Free Package ORDERING INFORMATION Publication Order Number: NTD24N06/D ...

Page 2

... Device NTD24N06 NTD24N06G NTD2406−1 NTD2406−1G NTD24N06T4 NTD24N06T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTD24N06 (T = 25°C unless otherwise noted) J Symbol Vdc 7.0 Vdc, I ...

Page 3

... 1.8 GS 1.6 1.4 1.2 1 0.8 0.6 −50 − 100 T , JUNCTION TEMPERATURE (°C) J Figure 5. On−Resistance Variation with Temperature NTD24N06 50 ≥ 5 100° GATE−TO−SOURCE VOLTAGE (VOLTS) GS Figure 2. Transfer Characteristics ...

Page 4

... GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) NTD24N06 POWER MOSFET SWITCHING The capacitance (C a voltage corresponding to the off−state condition when calculating t on−state when calculating t At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET ...

Page 5

... T )/(R ). qJC J(MAX Power MOSFET designated E−FET can be safely used in switching circuits with unclamped inductive loads. For NTD24N06 1000 V GS 100 t d(off d(on 25°C ...

Page 6

... DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating Area 1 0.5 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE 0.01 1.0E−05 1.0E−04 I Figure 14. Diode Reverse Recovery Waveform NTD24N06 SAFE OPERATING AREA 200 10 ms 160 120 100 STARTING JUNCTION TEMPERATURE (°C) J Figure 12. Maximum Avalanche Energy versus P ...

Page 7

... 0.13 (0.005) M 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTD24N06 PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O SEATING −T− PLANE SOLDERING FOOTPRINT* 6 ...

Page 8

... K 0.350 0.380 8.89 9.65 R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTD24N06/D ...

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