ipd03n03lag Infineon Technologies Corporation, ipd03n03lag Datasheet - Page 7

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ipd03n03lag

Manufacturer Part Number
ipd03n03lag
Description
N-channel Mosfet 20v?300v Power Transistor Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet

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Part Number
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Part Number:
IPD03N03LAG
Manufacturer:
INFINEON
Quantity:
35 000
Rev. 1.4
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
10
29
28
27
26
25
24
23
22
21
20
AV
1
-60
=f(T
); R
1
j
GS
); I
j(start)
-20
=25 Ω
D
=1 mA
10
20
t
T
AV
j
60
C °150
[°C]
[µs]
100
100
C °100
140
C °25
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
=45 A pulsed
g s
IPD03N03LA G
20
Q
Q
gate
g
Q
40
sw
[nC]
Q
g d
V 5
IPS03N03LA G
60
V 15
V 20
Q
g ate
2008-04-11
80

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