ipd034n06n3g Infineon Technologies Corporation, ipd034n06n3g Datasheet - Page 6

• Manufacturer Part Number: ipd034n06n3g
• Description: Optimos Tm 3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.0
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
10
DS
=f(T
6
5
4
3
2
1
0
5
4
3
2
1
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=100 A; V
20
20
max
GS
Crss
V
T
Coss
Ciss
=10 V
j
DS
60
[°C]
[V]
typ
100
40
140
180
page 6
60
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
10
10
10
3.5
2.5
1.5
0.5
=f(T
SD
4
3
2
1
0
3
2
1
0
-60
)
0
j
); V
D
j
GS
-20
=V
0.5
DS
175 °C
20
93 µA
V
T
SD
j
60
[°C]
1
25 °C, max
25 °C
[V]
930 µA
IPD034N06N3 G
100
1.5
175 °C, max
140
2008-12-11
180
2