ipd042p03l3g Infineon Technologies Corporation, ipd042p03l3g Datasheet - Page 7

• Manufacturer Part Number: ipd042p03l3g
• Description: Optimostm P3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 1.0 Preliminary Datasheet
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
10
10
10
AS
BR(DSS)
2
1
0
=f(t
10
0
32
31
30
29
28
AV
-60
=f(T
); R
j
GS
); I
j(start)
-20
=25 Ω
D
=-250 µA
10
1
20
t
AV
T
j
[µs]
60
[°C]
150 °C
100
10
2
100 °C
140
25 °C
180
page 7
10
3
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
10
V
9
8
7
6
5
4
3
2
1
0
g(th)
g s(th)
GS
0
gate
); I
DD
20
Q
D
=-70 A pulsed
g s
40
-Q
Q
60
gate
g
Q
sw
[nC]
-6 V
Q
80
g d
IPD042P03L3 G
-24 V
100
-15 V
120
Q
g ate
2008-11-12
140