ipd50n06s3l-06 Infineon Technologies Corporation, ipd50n06s3l-06 Datasheet - Page 2

• Manufacturer Part Number: ipd50n06s3l-06
• Description: N-channel Enh. 55v Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 1.1
Parameter
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
2)
j
=25 °C, unless otherwise specified
Symbol
R
R
V
V
I
I
R
DSS
GSS
(BR)DSS
GS(th)
thJC
thJA
DS(on)
minimal footprint
6 cm
V
V
V
T
V
T
V
V
V
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=125 °C
page 2
=V
=55 V, V
=55 V, V
=0 V, I
=16 V, V
=5 V, I
=10 V, I
2
Conditions
cooling area
GS
, I
2)
D
D
D
= 1 mA
=37 A
D
=80 µA
GS
GS
DS
=50 A
=0 V,
=0 V,
=0 V
4)
min.
1.2
55
-
-
-
-
-
-
-
-
Values
0.01
typ.
1.7
8.4
5.1
1
1
-
-
-
-
IPD50N06S3L-06
max.
100
100
1.1
2.2
62
40
11
1
6
-
2007-11-07
Unit
K/W
V
µA
nA
m