ipd640n06lg Infineon Technologies Corporation, ipd640n06lg Datasheet - Page 2

• Manufacturer Part Number: ipd640n06lg
• Description: N-channel Mosfet 20v?300v Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 1.2
2)
connection. PCB is vertical in still air.
Parameter
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
I
I
R
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJC
thJA
DS(on)
G
minimal footprint
6 cm
V
V
V
T
V
T
V
V
V
|V
I
D
page 2
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=125 °C
=18 A
DS
=V
=60 V, V
=60 V, V
=0 V, I
=20 V, V
=10 V, I
=4.5 V, I
|>2|I
2
cooling area
GS
, I
D
2
|R
D
(one layer, 70 µm thick) copper area for drain
D
=1 mA
D
=16 µA
D
GS
GS
DS
DS(on)max
=18 A
=12 A
=0 V,
=0 V,
=0 V
2)
,
min.
1.2
9.5
60
-
-
-
-
-
-
-
-
-
Values
0.01
typ.
1.6
1.2
10
47
64
19
1
-
-
-
-
IPD640N06L G
max.
100
100
3.2
75
50
64
85
2
1
-
-
-
Unit
K/W
V
µA
nA
m
S
2006-03-27