ipd78cn10ng Infineon Technologies Corporation, ipd78cn10ng Datasheet - Page 2

• Manufacturer Part Number: ipd78cn10ng
• Description: N-channel Mosfet 20v?300v Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 1.05
4)
connection. PCB is vertical in still air.
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient (TO220, TO262, TO263)
Thermal resistance, junction -
ambient (TO252, TO251)
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
I
I
R
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJC
thJA
DS(on)
G
minimal footprint
6 cm2 cooling area
minimal footprint
6 cm2 cooling area
V
V
V
T
V
T
V
V
(TO252)
V
(TO251)
V
(TO263)
V
(TO220, TO262)
|V
I
D
page 2
j
j
GS
DS
DS
DS
GS
GS
GS
GS
GS
=25 °C
=125 °C
=13 A
DS
=V
=80 V, V
=80 V, V
=0 V, I
=20 V, V
=10 V, I
=10 V, I
=10 V, I
=10 V, I
|>2|I
GS
, I
D
2
|R
D
(one layer, 70 µm thick) copper area for drain
D
=1 mA
D
D
D
D
=12 µA
GS
GS
DS
DS(on)max
=13 A,
=13 A,
=13 A,
=13 A,
=0 V,
=0 V,
=0 V
4)
4)
,
IPB79CN10N G IPD78CN10N G
IPI80CN10N G IPP80CN10N G
min.
100
2
7
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
typ.
0.1
0.8
10
59
59
61
61
13
3
1
-
-
-
-
-
-
max.
100
100
4.9
62
40
75
50
78
78
79
80
4
1
-
-
-
Unit
K/W
V
µA
nA
mΩ
Ω
S
2008-03-10