spd50n03s2l-06g Infineon Technologies Corporation, spd50n03s2l-06g Datasheet
spd50n03s2l-06g
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spd50n03s2l-06g Summary of contents
Page 1
... Excellent Gate Charge x R • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated ° Pb-free lead plating; RoHS compliant Type Package SPD50N03S2L-06 G PG- TO252 -3 Maximum Ratings °C, unless otherwise specified j Parameter 1) Continuous drain current T =25°C ...
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... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Symbol R thJC R thJA R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) R DS(on) = 1.1K/W the chip is able to carry I thJC Page 2 SPD50N03S2L-06 Values Unit min. typ. max. - 0.7 1.1 K 100 - - Values Unit min. typ. max 1.2 1 ...
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... GS V (plateau) V =24V, I =50A =25° =0V, I =50A =15V /dt=100A/µ Page 3 SPD50N03S2L-06 Values Unit min. typ. max 1900 2530 pF - 740 990 - 180 270 - ...
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... K 7.6µs 10 µ 100 µ Page 4 SPD50N03S2L-06 ) ≥ 100 120 140 160 ) SPD50N03S2L- 0.50 single pulse - 02-09-2008 G °C 190 T C 0.20 0.10 0.05 0.02 0. ...
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... Typ. forward transconductance g = f(I DS(on)max fs parameter 2 Page 5 SPD50N03S2L- =10V GS SPD50N03S2L- [ 3.2 3.4 3.6 3.8 4.5 10 =25° ...
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... C oss 10 C rss Page 6 SPD50N03S2L- 0.415 mA 83 µ -60 - 100 ) µs p SPD50N03S2L- °C typ 175 °C typ °C (98 175 °C (98 0.4 0.8 1.2 1.6 2 02-09-2008 G °C 160 ...
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... Typ. gate charge Ω parameter °C 125 145 185 T j °C 100 140 200 T j Page 7 SPD50N03S2L-06 ) Gate = 50 A pulsed D SPD50N03S2L-06 0 max 0 max 02-09-2008 Gate ...
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... Package outline: PG-TO252-3 Page 8 G SPD50N03S2L-06 02-09-2008 ...
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... Page 9 SPD50N03S2L-06 G 02-09-2008 ...