ipp100n04s4-h2 Infineon Technologies Corporation, ipp100n04s4-h2 Datasheet - Page 2

• Manufacturer Part Number: ipp100n04s4-h2
• Description: Optimos -t2 Power-transistor
• Manufacturer: Infineon Technologies Corporation

Rev. 1.0
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
2)
j
=25 °C, unless otherwise specified
Symbol
R
R
R
V
V
I
I
R
DSS
GSS
(BR)DSS
GS(th)
thJC
thJA
thJA
DS(on)
-
-
minimal footprint
6 cm
V
V
V
V
T
V
V
V
SMD version
j
GS
DS
DS
DS
GS
GS
GS
=85°C
page 2
=V
=40V, V
=18V, V
=0V, I
=20V, V
=10V, I
=10V, I
2
Conditions
cooling area
GS
2)
, I
D
= 1mA
D
D
D
GS
GS
DS
=70µA
=100A
=100A,
=0V
=0V,
=0V
IPI100N04S4-H2, IPP100N04S4-H2
3)
min.
2.0
40
-
-
-
-
-
-
-
-
-
Values
0.03
typ.
3.0
2.4
2.1
1
-
-
-
-
-
-
IPB100N04S4-H2
max.
100
1.3
4.0
2.7
2.4
62
62
40
20
1
-
2010-04-13
Unit
K/W
V
µA
nA
m