ipp139n08n3g Infineon Technologies Corporation, ipp139n08n3g Datasheet

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OptiMOS (TM) 3 Power-Transistor Features • Ideal for high frequency switching • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according ...

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Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Drain-source on-state resistance Gate ...

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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output ...

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Power dissipation P =f(T ) tot Safe operating area I =f =25 ° parameter limited by on-state resistance ...

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Typ. output characteristics I =f =25 ° parameter 150 100 Typ. transfer characteristics I =f |>2 ...

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Drain-source on-state resistance =10 V DS(on max -60 - Typ. capacitances C =f ...

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Avalanche characteristics =25 Ω parameter: T j(start) 100 Drain-source breakdown voltage V =f BR(DSS ...

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PG-TO-263-3 (D²-Pak) Rev. 2.3 IPP139N08N3 G IPI139N08N3 G page 8 IPB136N08N3 G 2008-06-24 ...

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PG-TO-262-3 (I²-Pak) Rev. 2.3 IPP139N08N3 G IPI139N08N3 G page 9 IPB136N08N3 G 2008-06-24 ...

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PG-TO-220-3 Rev. 2.3 IPP139N08N3 G IPI139N08N3 G page 10 IPB136N08N3 G 2008-06-24 ...

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Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...