tn2529 Supertex, Inc., tn2529 Datasheet
tn2529
Manufacturer Part Number
tn2529
Description
N-channel Enhancement-mode Vertical Dmos Fet
Manufacturer
Supertex, Inc.
Datasheet
1.TN2529.pdf
(3 pages)
Features
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Applications
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-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to
the device may occur. Functional operation under these conditions is not
implied. Continuous operation of the device at the absolute rating level
may affect device reliability. All voltages are referenced to device ground.
Ordering Information
Parameter
Drain-to-Source voltage
Drain-to-Gate voltage
Gate-to-Source voltage
Operating and storage temperature
Maximum junction temperature
TN2529
Device
Low threshold (2.0V max.)
High input impedance
Low input capacitance (125pF max.)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic devices
Analog switches
General purpose line drivers
Telecom switches
5x5mm body, 1.0mm height (max), 1.27mm pitch
Package Option
14-Lead QFN
TN2529K6-G
N-Channel Enhancement-Mode
Vertical DMOS FET
-55°C to +150°C
150°C
Value
BV
BV
±20V
DGS
DSS
Product Marking
General Description
The Supertex TN2529 is a low threshold enhancement-
mode transistor that utilizes an advanced vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors,
and the high input impedance and positive temperature
coeffi cient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway
and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Pin Confi guration
BV
DSS
290
(V)
/BV
SOURCE
SOURCE
SOURCE
TN2529
LLLLLL
YYWW
AAACCC
DGS
NC
1
2
3
4
1
14-Lead QFN (K6)
14-Lead QFN (K6)
DRAIN
DRAIN
R
14
(max)
5
DS(ON)
6.0
(Ω)
L = Lot Number
YY = Year Sealed
WW = Week Sealed
A = Assembler ID
C = Country of Origin
DRAIN
DRAIN
13
6
= “Green” Packaging
DRAIN
DRAIN
12
7
V
(max)
2.0
GS(th)
(V)
11
10
9
8
GATE
SOURCE
SOURCE
SOURCE
TN2529
I
(min)
D(ON)
1.0
(A)
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tn2529 Summary of contents
Page 1
... All voltages are referenced to device ground. N-Channel Enhancement-Mode Vertical DMOS FET General Description The Supertex TN2529 is a low threshold enhancement- mode transistor that utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device ...
Page 2
... 25V 1.0MHz 25V 1.0A 25Ω GEN PULSE OUTPUT R GEN D.U.T. INPUT TN2529 † DRM ( ( mA) A) 410 2 Max rating 25V DS = 25V = 250mA = 500mA = 500mA = 500mA ...
Page 3
... Dimension NOM 0.90 0.02 (mm) MAX 1.00 0.05 Drawings not to scale. (The package drawing(s) in this data sheet may not refl ect the most current specifi cations. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-TN2529 A111407 θ Seating A3 Plane ...