spw47n60 Infineon Technologies Corporation, spw47n60 Datasheet - Page 9

• Manufacturer Part Number: spw47n60
• Description: Transistor,mosfet,n-channel,600v V Br Dss,47a I D ,to-247var
• Manufacturer: Infineon Technologies Corporation

17 Typ. switching losses
E = f (I
par.: V
19 Avalanche SOA
I
par.: T
AR
mWs
= f (t
0.4
0.2
0.1
A
20
16
14
12
10
0
8
6
4
2
0
j
10
D
DS
0
*) Eon includes SDP06S60 diode
), inductive load, T
AR
-3
=380V, V
commutation losses.
150 °C
)
10
10
-2
10
-1
GS
20
10
=0/+13V, R
Eoff
0
10
j
=125°C
30
1
Eon*
10
G
2
A
=1.8
I
t
µs
D
AR
Final data
10
50
Page 9
4
18 Typ. switching losses
E = f(R
par.: V
20 Avalanche energy
E
par.: I
AS
mWs
1800
1400
1200
1000
mJ
800
600
400
200
= f (T
1.4
0.8
0.6
0.4
0.2
D
1
0
0
25
DS
0
G
*) Eon includes SDP06S60 diode
= 10 A, V
), inductive load, T
=380V, V
commutation losses.
j
2
)
Eoff
50
4
DD
6
GS
75
= 50 V
8
=0/+13V, I
10
SPW47N60C3
100
j
12
=125°C
Eon*
14
2002-08-08
D
=47A
°C
16
R
T
j
G
150
20