sis412dn Vishay, sis412dn Datasheet - Page 3

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sis412dn

Manufacturer Part Number
sis412dn
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69006
S09-0135-Rev. C, 02-Feb-09
0.035
0.030
0.025
0.020
0.015
0.010
30
25
20
15
10
10
5
0
8
6
4
2
0
0.0
0
0
I
On-Resistance vs. Drain Current
D
0.5
= 7.8 A
5
V
DS
V
V
Output Characteristics
2
V
GS
GS
Q
DS
- Drain-to-Source Voltage (V)
g
1.0
I
10
= 4.5 V
= 10 V
V
D
- Total Gate Charge (nC)
= 15 V
Gate Charge
GS
- Drain Current (A)
= 10 thru 4 V
1.5
15
4
2.0
20
V
DS
V
6
= 24 V
GS
2.5
25
= 3 V
New Product
3.0
30
8
600
500
400
300
200
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
rss
I
- 25
D
= 7.8 A
0.5
5
V
C
V
C
DS
Transfer Characteristics
iss
GS
T
0
oss
J
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
1.0
10
Capacitance
25
T
C
= 125 °C
1.5
15
50
T
C
Vishay Siliconix
= 25 °C
V
GS
75
SiS412DN
2.0
= 10 V
20
100
www.vishay.com
V
GS
T
2.5
C
25
= 4.5 V
125
= - 55 °C
150
3.0
30
3

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