MX29LV640BU Macronix International, MX29LV640BU Datasheet - Page 59

• Manufacturer Part Number: MX29LV640BU
• Description: 64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY
• Manufacturer: Macronix International

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Note:
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA=25 C, f=1.0MHz
P/N:PM1081
LATCH-UP CHARACTERISTICS
TSOP PIN CAPACITANCE
DATA RETENTION
ERASE AND PROGRAMMING PERFORMANCE (1)
PARAMETER
Sector Erase Time
Chip Erase Time
Word Programming Time
Accelerated Word Program Time
Chip Programming Time
Erase/Program Cycles
Input Voltage with respect to GND on all pins except I/O pins
Input Voltage with respect to GND on all I/O pins
Current
Includes all pins except Vcc. Test conditions: Vcc = 3.0V, one pin at a time.
Parameter Symbol
CIN
COUT
CIN2
Parameter
Minimum Pattern Data Retention Time
1. Not 100% Tested, Excludes external system level over head.
2. Typical program and erase times assume the following condition= 25 C,3.0V VCC.
Additionally, programming typicals assume checkerboard pattern.
Parameter Description
Input Capacitance
Output Capacitance
Control Pin Capacitance
59
100,000
MIN.
150
Test Conditions
125
VOUT=0
Test Set
VIN=0
VIN=0
MX29LV640BU
TYP.(2)
LIMITS
0.9
45
11
45
7
TYP
Min
8.5
7.5
10
20
6
-100mA
MAX.
300
210
140
-1.0V
-1.0V
MIN.
15
65
MAX
7.5
12
9
REV. 1.0, MAR. 08, 2005
Years
Years
Unit
UNITS
Cycles
Vcc + 1.0V
sec
sec
sec
+100mA
UNIT
us
us
13.5V
MAX.
pF
pF
pF