MX29LV320ML Macronix International, MX29LV320ML Datasheet
MX29LV320ML
Available stocks
Related parts for MX29LV320ML
MX29LV320ML Summary of contents
Page 1
FEATURES GENERAL FEATURES • Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program opera- tions • Configuration - 4,194,304 2,097,152 x 16 switchable • Sector structure - 64KB(32KW • Sector ...
Page 2
The MX29LV320M H/L uses a command register to manage this functionality. MXIC Flash technology reliably stores memory contents even after 100,000 erase and program cycles. The MXIC cell is designed to optimize the erase ...
Page 3
PIN CONFIGURATION 56 TSOP A15 3 A14 4 A13 5 A12 6 A11 7 A10 A19 11 A20 12 WE# 13 RESET WP#/ACC 16 RY/BY# 17 A18 18 ...
Page 4
BLOCK DIAGRAM CE# OE# CONTROL WE# INPUT WP# LOGIC BYTE# RESET# ADDRESS LATCH A0-A20 AND BUFFER Q0-Q15(A-1) P/N:PM1136 MX29LV320M H/L PROGRAM/ERASE HIGH VOLTAGE FLASH ARRAY ARRAY SOURCE HV Y-PASS GATE PGM SENSE DATA AMPLIFIER HV PROGRAM DATA LATCH I/O BUFFER ...
Page 5
MX29LV320M H/L SECTOR ADDRESS TABLE Sector Sector Address A20-A15 SA0 000000 SA1 000001 SA2 000010 SA3 000011 SA4 000100 SA5 000101 SA6 000110 SA7 000111 SA8 001000 SA9 001001 SA10 001010 SA11 001011 SA12 001100 SA13 001101 SA14 001110 SA15 ...
Page 6
Sector Sector Address A20-A15 SA32 100000 SA33 100001 SA34 100010 SA35 100011 SA36 100100 SA37 100101 SA38 100110 SA39 100111 SA40 101000 SA41 101001 SA42 101010 SA43 101011 SA44 101100 SA45 101101 SA46 101110 SA47 101111 SA48 110000 SA49 110001 ...
Page 7
MX29LV320M H/L Sector Group Protection Address Table Sector Group SA0 SA1 SA2 SA3 SA4-SA7 SA8-SA11 SA12-SA15 SA16-SA19 SA20-SA23 SA24-SA27 SA28-SA31 SA32-SA35 SA36-SA39 SA40-SA43 SA44-SA47 SA48-SA51 SA52-SA55 SA56-SA59 SA60 SA61 SA62 SA63 P/N:PM1136 MX29LV320M H/L A20-A12 000000 000001 000010 000011 0001xx ...
Page 8
Table 1. BUS OPERATION (1) Operation CE# OE# WE# RE- Read L L Write (Program/Erase Accelerated Program L H Standby VCC X 0.3V Output Disable L H Reset X X Sector Group Protect L H (Note 2) Chip ...
Page 9
Table 2. AUTOSELECT CODES (High Voltage Method) A20 A14 Description CE# OE# WE# to A15 A10 Manufacturer Cycle 1 Cycle Cycle 3 Sector Group Protection Verification Secured Silicon ...
Page 10
REQUIREMENTS FOR READING ARRAY DATA To read array data from the outputs, the system must drive the CE# and OE# pins to VIL. CE# is the power control and selects the device. OE# is the output control and gates array ...
Page 11
STANDBY MODE When using both pins of CE# and RESET#, the device enter CMOS Standby with both pins held at VCC 0.3V. If CE# and RESET# are held at VIH, but not within the range of VCC 0.3V, the device ...
Page 12
... Sector/Sector Group Protection and Chip Unprotect". If the system asserts VIH on the WP# pin, the device reverts to whether the first (MX29LV320MH) or last (MX29LV320ML) sector were last set to be protected or P/N:PM1136 MX29LV320M H/L unprotect. That is, sector protection or unprotection for these two sectors depends on whether they were last protected or unprotect using the method described in " ...
Page 13
DATA PROTECTION The MX29LV320M H/L is designed to offer protection against accidental erasure or programming caused by spurious system level signals that may exist during power transition. During power up the device automatically re- sets the state machine in the ...
Page 14
Write the three-cycle Enter Secured Silicon Sector Region command sequence, and then alternate method of sector protection described in the :Sector Group Protection and Unprotect" section. Once the Secured Silicon Sector is programmed, locked and verified, the system must write ...
Page 15
SOFTWARE COMMAND DEFINITIONS Device operations are selected by writing specific ad- dress and data sequences into the command register. Writing incorrect address and data values or writing them in the improper sequence will reset the device to the read mode. ...
Page 16
Legend: X=Don't care RA=Address of the memory location to be read. RD=Data read from location RA during read operation. PA=Address of the memory location to be programmed. Addresses are latched on the falling edge of the WE# or CE# pulse, ...
Page 17
READING ARRAY DATA The device is automatically set to reading array data after device power-up. No commands are required to re- trieve data. The device is also ready to read array data after completing an Automatic Program or Automatic Erase ...
Page 18
The Byte/Word Program command sequence should be reinitiated once the device has reset to read- ing array data, to ensure data integrity. Programming is allowed in any sequence and across sector boundaries. ...
Page 19
When the Program Suspend com- mand is written during a programming process, the de- vice halts the program operation within 15us maximum (5 us typical) and updates the ...
Page 20
SECTOR ERASE COMMANDS The Automatic Sector Erase does not require the device to be entirely pre-programmed prior to executing the Au- tomatic Set-up Sector Erase command and Automatic Sector Erase command. Upon executing the Automatic Sector Erase command, the device ...
Page 21
QUERY COMMAND AND COMMON FLASH INTERFACE (CFI) MODE MX29LV320M H/L is capable of operating in the CFI mode. This mode all the host system to determine the manu- facturer of the device such as operating parameters and configuration. Two commands ...
Page 22
Table 4-3. CFI Mode: Device Geometry Data Values Description n Device size (2 bytes) Flash device interface code Maximum number of bytes in multi-byte write = 2 Number of erase block regions (01h=uniform device; 02h=boot device) Erase block region 1 ...
Page 23
Table 4-4. CFI Mode: Primary Vendor-Specific Extended Query Data Values Description Query-unique ASCII string "PRI" Major version number, ASCII Minor version number, ASCII Address sensitive unlock (0=required, 1= not required) Erase suspend (2= to read and write) Sector protect (N= ...
Page 24
WRITE OPERATION STATUS The device provides several bits to determine the status of a write operation: Q2, Q3, Q5, Q6, Q7, and RY/BY#. Table 5 and the following subsections describe the func- tions of these bits. Q7, RY/BY#, and Q6 ...
Page 25
Q7: Data# Polling The Data# Polling bit, Q7, indicates to the host system whether an Automatic Algorithm is in progress or com- pleted, or whether the device is in Erase Suspend. Data# Polling is valid after the rising edge of ...
Page 26
Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sectors and mode information. Refer to Table 5 to compare ...
Page 27
Toggle Bit low ("0"), the device will accept addi- tional sector erase commands. To insure the command has been accepted, the system software should check the status of Q3 prior to and following each subsequent sector erase ...
Page 28
ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . ..... -65 Ambient Temperature with Power Applied .... ...
Page 29
DC CHARACTERISTICS TA=- VCC=2.7V~3.6V (TA VCC=3.0V~3.6V for 70R) Para- meter Description I LI Input Load Current (Note 1) I LIT A9 Input Leakage Current I LO Output Leakage Current ICC1 VCC Initial ...
Page 30
SWITCHING TEST CIRCUITS DEVICE UNDER TEST CL 6.2K ohm KEY TO SWITCHING WAVEFORMS WAVEFORM Don't Care, Any Change Permitted SWITCHING TEST WAVEFORMS 3.0V 0.0V P/N:PM1136 MX29LV320M H/L TEST SPECIFICATIONS Test Condition Output Load 2.7K ohm Output Load Capacitance, CL 3.3V ...
Page 31
AC CHARACTERISTICS Read-Only Operations TA=- VCC=2.7V~3.6V (TA VCC=3.0V~3.6V for 70R) Parameter Std. Description tRC Read Cycle Time (Note 1) tACC Address to Output Delay tCE Chip Enable to Output Delay tPACC Page ...
Page 32
Figure 1. READ TIMING WAVEFORMS VIH Addresses VIL VIH CE# VIL VIH WE# VIL VIH OE# VIL HIGH Z VOH Outputs VOL VIH RESET# VIL RY/BY# 0V Figure 2. PAGE READ TIMING WAVEFORMS A2-A21 (A-1), A0~A2 tACC CE# OE# Output ...
Page 33
AC CHARACTERISTICS Parameter Description tREADY1 RESET# PIN Low (During Automatic Algorithms) to Read or Write (See Note) tREADY2 RESET# PIN Low (NOT During Automatic Algorithms) to Read or Write (See Note) tRP RESET# Pulse Width (NOT During Automatic Algorithms) tRH ...
Page 34
AC CHARACTERISTICS Erase and Program Operations TA=- VCC=2.7V~3.6V 3.0V~3.6V for 70R) Parameter Std. Description tWC Write Cycle Time (Note 1) tAS Address Setup Time tASO Address Setup Time to OE# low during toggle bit polling tAH ...
Page 35
ERASE/PROGRAM OPERATION Figure 4. AUTOMATIC PROGRAM TIMING WAVEFORMS Program Command Sequence(last two cycle) tWC XXXh Address CE# OE# tWP WE# tCS tDS Data RY/BY# tVCS VCC Note : 1.PA=Program Address, PD=Program Data, DOUT is the true data the program address ...
Page 36
Figure 6. AUTOMATIC PROGRAMMING ALGORITHM FLOWCHART Increment Address P/N:PM1136 MX29LV320M H/L START Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data A0H Address 555H Write Program Data/Address Data Poll from system No Verify Word Ok ? YES ...
Page 37
Figure 7. WRITE BUFFER PROGRAMMING ALGORITHM FLOWCHART Write "Write to Buffer" command and Sector Address Write number of addresses to program minus 1(WC) and Sector Address Write first address/data Yes Abort Write to Buffer Operation ...
Page 38
Figure 8. PROGRAM SUSPEND/RESUME FLOWCHART P/N:PM1136 MX29LV320M H/L Program Operation or Write-to-Buffer Sequence in Progress Write Program Suspend Command Sequence Write address/data Command is also valid for XXXh/B0h Erase-suspended-program operations Wait 15us Autoselect and Secured Sector Read data as read ...
Page 39
Figure 9. AUTOMATIC CHIP/SECTOR ERASE TIMING WAVEFORM Erase Command Sequence(last two cycle) tWC 2AAh Address CE# OE# tWP WE# tCS Data RY/BY# tVCS VCC Note : 1.SA=sector address(for Sector Erase), VA=Valid Address for reading status data(see "Write Operation Status"). P/N:PM1136 ...
Page 40
Figure 10. AUTOMATIC CHIP ERASE ALGORITHM FLOWCHART P/N:PM1136 MX29LV320M H/L START Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data 80H Address 555H Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data 10H Address ...
Page 41
Figure 11. AUTOMATIC SECTOR ERASE ALGORITHM FLOWCHART P/N:PM1136 MX29LV320M H/L START Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data 80H Address 555H Write Data AAH Address 555H Write Data 55H Address 2AAH Write Data 30H Sector ...
Page 42
Figure 12. ERASE SUSPEND/RESUME FLOWCHART P/N:PM1136 MX29LV320M H/L START Write Data B0H ERASE SUSPEND NO Toggle Bit checking Q6 not toggled YES Read Array or Program Reading or NO Programming End YES Write Data 30H ERASE RESUME Continue Erase Another ...
Page 43
AC CHARACTERISTICS Alternate CE# Controlled Erase and Program Operations TA=- VCC=2.7V~3.6V (TA VCC=3.0V~3.6V for 70R) Parameter Std. Description tWC Write Cycle Time (Note 1) tAS Address Setup Time tAH Address Hold Time ...
Page 44
Figure 13. CE# CONTROLLED PROGRAM TIMING WAVEFORM 555 for program 2AA for erase Address tWC tWH WE# tGHEL OE# CE# tWS Data tRH RESET# RY/BY# NOTES: 1.PA=Program Address, PD=Program Data, DOUT=Data Out, Q7=complement of data written to device. 2.Figure indicates ...
Page 45
SECTOR GROUP PROTECT/CHIP UNPROTECT Figure 14. Sector Group Protect / Chip Unprotect Waveform (RESET# Control) VID VIH RESET# SA, A6 A1, A0 Sector Group Protect or Chip Unprotect Data 60h 1us CE# WE# OE# Note: For sector group protect A6=0, ...
Page 46
Figure 15. IN-SYSTEM SECTOR GROUP PROTECT/CHIP UNPROTECT ALGORITHMS WITH RESET#=VID START PLSCNT=1 RESET#=VID Wait 1us No First Write Temporary Sector Unprotect Mode Cycle=60h? Yes Set up sector address Sector Protect: Write 60h to sector address with A6=0, A1=1, A0=0 Wait ...
Page 47
AC CHARACTERISTICS Parameter Description tVLHT Voltage transition time tWPP1 Write pulse width for sector group protect tOESP OE# setup time to WE# active Figure 16. SECTOR GROUP PROTECT TIMING WAVEFORM (A9, OE# Control 12V 3V A9 tVLHT 12V ...
Page 48
Figure 17. SECTOR GROUP PROTECTION ALGORITHM (A9, OE# Control) No PLSCNT=32? Yes Device Failed P/N:PM1136 MX29LV320M H/L START Set Up Sector Addr PLSCNT=1 OE#=VID, A9=VID, CE#=VIL A6=VIL Activate WE# Pulse Time Out 150us Set WE#=VIH, CE#=OE#=VIL A9 should remain VID ...
Page 49
Figure 18. CHIP UNPROTECT TIMING WAVEFORM (A9, OE# Control) A1 12V 3V A9 tVLHT A6 12V 3V OE# tVLHT WE# CE# Data P/N:PM1136 MX29LV320M H/L tWPP 2 tOESP 49 www.DataSheet4U.com Verify tVLHT 00H F0H tOE REV. 1.1, AUG. 11, 2005 ...
Page 50
Figure 19. CHIP UNPROTECT FLOWCHART (A9, OE# Control) Increment Sector Addr * It is recommended before unprotect whole chip, all sectors should be protected in advance. P/N:PM1136 MX29LV320M H/L START Protect All Sectors PLSCNT=1 Set OE#=A9=VID CE#=VIL, A6=1 Activate WE# ...
Page 51
AC CHARACTERISTICS Parameter Description tVIDR VID Rise and Fall Time (see Note) tRSP RESET# Setup Time for Temporary Sector Unprotect tRRB RESET# Hold Time from RY/BY# High for Temporary Sector Group Unprotect Figure 20. TEMPORARY SECTOR GROUP UNPROTECT WAVEFORMS 12V ...
Page 52
Figure 21. TEMPORARY SECTOR GROUP UNPROTECT FLOWCHART Temporary Sector Unprotect Completed(Note 2) Notes : 1. All protected sectors are temporary unprotected. P/N:PM1136 MX29LV320M H/L Start RESET# = VID (Note 1) Perform Erase or Program Operation Operation Completed RESET# = VIH ...
Page 53
Figure 22. SECURED SILICON SECTOR PROTECTED ALGORITHMS FLOWCHART Device Failed P/N:PM1136 MX29LV320M H/L START Enter Secured Silicon Sector Wait 1us First Wait Cycle Data=60h Second Wait Cycle Data=60h A6=0, A1=1, A0=0 Wait 300us No Data = 01h ? Yes Write ...
Page 54
Figure 23. SILICON ID READ TIMING WAVEFORM VCC 3V VID ADD VIH A9 VIL VIH ADD A0 VIL tACC VIH A1 VIL VIH A2 VIL VIH ADD VIL CE# VIH VIL tCE VIH WE# VIL tOE VIH OE# VIL VIH ...
Page 55
WRITE OPERATION STATUS Figure 24. DATA# POLLING TIMING WAVEFORMS (DURING AUTOMATIC ALGORITHMS) tRC Address VA tACC tCE CE# tCH OE# tOEH WE# Q7 Q0-Q6 tBUSY RY/BY# Note : VA=Valid address. Figure shows are first status cycle after command sequence, last ...
Page 56
Figure 25. DATA# POLLING ALGORITHM Notes: 1.VA=valid address for programming. 2.Q7 should be rechecked even Q5="1" because Q7 may change simultaneously with Q5. P/N:PM1136 MX29LV320M H/L Start Read Q7~Q0 Add.=VA(1) Yes Q7 = Data ? ...
Page 57
Figure 26. TOGGLE BIT TIMING WAVEFORMS (DURING AUTOMATIC ALGORITHMS) tRC Address VA tACC tCE CE# tCH tOE OE# tOEH WE# tDH Q6/Q2 Valid Status RY/BY# Note : VA=Valid address; not required for Q6. Figure shows first two status cycle after ...
Page 58
Figure 27. TOGGLE BIT ALGORITHM NO Note: 1. Read toggle bit twice to determine whether or not it is toggling. 2. Recheck toggle bit because it may stop toggling as Q5 changes to "1". P/N:PM1136 MX29LV320M H/L START Read Q7~Q0 ...
Page 59
Figure 28. Q6 versus Q2 Enter Embedded Erase Erasing Suspend Erase WE NOTES: The system can use OE# or CE# to toggle Q2/Q6, Q2 toggles only when read at an address within an erase-suspended P/N:PM1136 MX29LV320M H/L Enter ...
Page 60
ERASE AND PROGRAMMING PERFORMANCE (1) PARAMETER Sector Erase Time Chip Erase Time Total Write Buffer Program Time (Note 4) Total Accelerated Effective Write Buffer Program Time (Note 4) Chip Program Time Notes: 1. Typical program and erase times assume the ...
Page 61
TSOP PIN AND BGA PACKAGE CAPACITANCE Parameter Symbol Parameter Description CIN Input Capacitance COUT Output Capacitance CIN2 Control Pin Capacitance Notes: 1. Sampled, not 100% tested. 2. Test conditions TA=25 C, f=1.0MHz P/N:PM1136 MX29LV320M H/L Test Set TYP VIN=0 TSOP ...
Page 62
... MX29LV320MHTC-70R 70 MX29LV320MHTC-90 90 MX29LV320MLTC-70R 70 MX29LV320MLTC-90 90 MX29LV320MHTI-90 90 MX29LV320MLTI-90 90 MX29LV320MHTC-90G 90 MX29LV320MLTC-90G 90 MX29LV320MHTI-90G 90 MX29LV320MLTI-90G 90 P/N:PM1136 MX29LV320M H/L Ball Pitch/ PACKAGE Ball size 56 Pin TSOP (Normal Type) 56 Pin TSOP (Normal Type) 56 Pin TSOP (Normal Type) 56 Pin TSOP (Normal Type) 56 Pin TSOP (Normal Type) 56 Pin TSOP (Normal Type) ...
Page 63
PART NAME DESCRIPTION 640 P/N:PM1136 MX29LV320M H OPTION: G: Lead-free package R: Restricted VCC (3.0V~3.6V) Q: Restricted VCC (3.0V~3.6V) with Lead-free package blank: normal SPEED: 70: 70ns 90: 90ns 10:100ns TEMPERATURE ...
Page 64
PACKAGE INFORMATION P/N:PM1136 MX29LV320M H/L 64 www.DataSheet4U.com REV. 1.1, AUG. 11, 2005 ...
Page 65
REVISION HISTORY Revision No. Description 1.0 1. Removed "Advanced Information" on title 1.1 1. Added description about Pb-free device is RoHS compliant 2. Added note 7 for ILIT parameter in DC Characteristics table 3. Added comments into performance table 4. ...
Page 66
... MX29LV320M H/L MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice. www.DataSheet4U.com ...