MBM29PL65LM Fujitsu Media Devices, MBM29PL65LM Datasheet
MBM29PL65LM
Manufacturer Part Number
MBM29PL65LM
Description
FLASH MEMORY CMOS 64 M (4M X 16) BIT MirrorFlashTM
Manufacturer
Fujitsu Media Devices
Datasheet
1.MBM29PL65LM.pdf
(56 pages)
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www.DataSheet4U.com
FUJITSU SEMICONDUCTOR
FLASH MEMORY
CMOS
64 M (4M
MirrorFlash
MBM29PL65LM
Notes: Programming in byte mode (
V
V
Max Address Access Time
Max CE Access Time
Max Page Read Access Time
CC
CCQ
DESCRIPTION
MBM29PL65LM is of 67,108,864 bit capacity +3.0 V -only Flash memory enabling word write, both across- the
chip, comprehensive erase and by-the-unit, individual sector erase.
Its CMOS peripheral circuitry contributes to significant saving in power consumption even at high-speed stand-
by mode operation.
MBM29PL65LM consists of 4M x 16 bit Word mode and erases 128 sectors at ever 32K word. Its package type
is 48-pin TSOP .
Embedded Program Algorithm
the program pulse widths and verifies proper cell margin.
MBM29PL65LM, because of its capability in electrical data erase and program through write command, enables
to rewrite data within the internal system. It is a truly dependable device for vast application possibilities.
PRODUCT LINE UP
PACKAGE
DATA SHEET
Programming to the address that already contains data is prohibited. (It is mandatory to erase data prior to overprogram on the same
address.
Part No.
TM
8) is prohibited.
TM
16) BIT
, when executed with erase or program command sequences, automatically times
48-pin plastic TSOP (1)
(FPT-48P-M19)
-
90/10
MBM29PL65LM-90
3.0 V to 3.6 V
Marking Side
90 ns
90 ns
25 ns
V
CC
MBM29PL65LM-10
DS05-20903-1E
3.0 V to 3.6 V
100 ns
100 ns
30 ns
V
CC
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