MBM29LV160TM Fujitsu Media Devices, MBM29LV160TM Datasheet - Page 35
MBM29LV160TM
Manufacturer Part Number
MBM29LV160TM
Description
(MBM29LV160BM/TM) FLASH MEMORY CMOS 16 M (2M X 8/1M X 16) BIT MirrorFlashTM
Manufacturer
Fujitsu Media Devices
Datasheet
1.MBM29LV160TM.pdf
(57 pages)
- Current page: 35 of 57
- Download datasheet (551Kb)
Notes :
Address
CE
OE
WE
Data
PA is address of the memory location to be programmed.
PD is data to be programmed at word address.
DQ
D
Figure indicates the last two bus cycles out of four bus cycle sequence.
OUT
t
7
GHWL
is the output of the complement of the data written to the device.
is the output of the data written to the device.
Alternate WE Controlled Program Operation Timing Diagram
3rd Bus Cycle
t
CS
555h
t
WC
t
A0h
t
WP
DS
t
DH
t
WPH
t
AS
t
CH
PA
PD
t
AH
Data Polling
t
WHWH1
DQ
PA
MBM29LV160TM/BM
7
D
OUT
t
DF
t
CE
t
RC
t
OE
D
OUT
t
OH
90
35
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