ILD620B Siemens Semiconductor Group, ILD620B Datasheet
ILD620B
Manufacturer Part Number
ILD620B
Description
AC INPUT PHOTOTRANSISTOR OPTOCOUPLER
Manufacturer
Siemens Semiconductor Group
Datasheet
1.ILD620B.pdf
(4 pages)
FEATURES
• Identical Channel to Channel Footprint
• Current Transfer Ratio (CTR) at I
• Saturated Current Transfer Ratio (CTR
• High Collector-Emitter Voltage, BV
• Dual and Quad Packages Feature:
• Field-Effect Stable by TRIOS
• Isolation Test Voltage from Double Molded
• Underwriters Lab File #E52744
• VDE 0884 Available with Option 1
Maximum Ratings (Each Channel)
Emitter
Forward Current ......................................... 60 mA
Surge Current............................................... 1.5 A
Power Dissipation ...................................... 100 mW
Derate from 25 C .................................. 1.3 mW/ C
Detector
Collector-Emitter Breakdown Voltage ............. 70 V
Collector Current.......................................... 50 mA
Collector Current (t <1 ms) ......................... 100 mA
Power Dissipation ...................................... 150 mW
Derate from 25 C ..................................... 2 mW/ C
Package
Isolation Test Voltage(t=1 sec.)......... 5300 VAC
Package Dissipation, ILD620/GB ............. 400 mW
Package Dissipation, ILQ620/GB ............. 500 mW
Creepage ................................................7 mm min.
Clearance ...............................................7 mm min.
Isolation Resistance
Storage Temperature .................. –55 C to +150 C
Operating Temperature............... –55 C to +100 C
Junction Temperature ................................... 100 C
Soldering Temperature
Derate from 25 C ............................... 5.33 mW/ C
Derate from 25 C ............................... 6.67 mW/ C
ILD620 Crosses to TLP620-2
ILQ620 Crosses to TLP620-4
ILD/Q620: 50% Min.
ILD/Q620GB: 100% Min.
at I
ILD/Q620: 60% Typ.
ILD/Q620GB: 30% Min.
- Reduced Board Space
- Lower Pin and Parts Count
- Better Channel to Channel CTR Match
- Improved Common Mode Rejection
(TR ansparent IO n S hield )
Package
V
V
(2 mm from case bottom).......................... 260 C
IO
IO
F
=500 V, T
=500 V, T
= 1 mA
A
A
=25 C ................................ 10
=100 C ............................. 10
F
= 5 mA
CEO
=70 V
SAT
12
11
)
RMS
DESCRIPTION
The ILD/Q620 and ILD/Q620GB are multi-channel input phototran-sistor
optocouplers that use inverse parallel GaAs IRLED emitters and high gain
NPN silicon phototransistors per channel. These devices are constructed
using over/under leadframe optical coupling and double molded insulation
resulting in a Withstand Test Voltage of 7500 VAC
The LED parameters and the linear CTR characteristics combined with the
TRIOS field-effect process make these devices well suited for AC voltage
detection. The ILD/Q620GB with its low IF guaranteed CTR
power dissipation of the AC voltage detection network that is placed in
series with the LEDs. Eliminating the phototransistor base connection pro-
vides added electrical noise immunity from the transients found in many
industrial control environments.
Dimensions in inches (mm)
.268 (6.81)
.268 (6.81)
.255 (6.48)
.255 (6.48)
.268 (6.81)
.255 (6.48)
.022 (.56)
.018 (.46)
.022 (.56)
.018 (.46)
4 Typ.
4 Typ.
5–1
QUAD CHANNEL
DUAL CHANNEL
4
5
.390 (9.91)
.379 (9.63)
.045 (1.14)
.030 (.76)
.045 (1.14)
.030 (.76)
3
6
.100 (2.54) Typ.
.100 (2.54) Typ.
2
7
.790 (20.07)
.779 (19.77 )
AC INPUT PHOTOTRANSISTOR
1
8
.150 (3.81)
.130 (3.30)
.040 (1.02)
.030 (.76 )
Pin One I.D.
Pin One I.D.
A/K
A/K
A/K
A/K
1
2
3
4
.150 (3.81)
.130 (3.30)
ILQ620/620GB
ILD620/620GB
.040 (1.02)
.030 (.76 )
K=Cathode
(7.75) Typ.
3 –9
.012 (.30)
.008 (.20)
.305 Typ.
10 Typ.
A/K
A/K
A/K
A/K
A/K
A/K
A/K
A/K
1
2
3
4
5
6
7
8
PEAK
8
7
6
5
OPTOCOUPLER
K=Cathode
.135 (3.43)
.115 (2.92)
Collector
Emitter
Collector
Emitter
(7.75) Typ.
.012 (.30)
.008 (.20)
.
3 –9
.305 Typ.
10 Typ.
CEsat
16
15
14
13
12
11
10
9
.135 (3.43)
.115 (2.92)
Collector
Emitter
Collector
Emitter
Collector
Emitter
Collector
Emitter
minimizes
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ILD620B Summary of contents
Page 1
FEATURES • Identical Channel to Channel Footprint ILD620 Crosses to TLP620-2 ILQ620 Crosses to TLP620-4 • Current Transfer Ratio (CTR ILD/Q620: 50% Min. ILD/Q620GB: 100% Min. • Saturated Current Transfer Ratio (CTR ...
Page 2
Characteristics Emitter Forward Voltage Forward Current Capacitance Thermal Resistance, Junction to Lead Detector Capacitance Collector-Emitter Leakage Current Collector-Emitter Leakage Current Thermal Resistance, Junction to Lead Package Transfer Characteristics Channel/Channel CTR Match CTR Symmetry Off-State Collector Current ILD/Q620 Saturated Current Transfer ...
Page 3
Figure 4. Saturated switching timing PLH PHL S Characteristic Symbol Typ. On Time T 3.0 ON Rise Time Off Time t 2.3 OFF Fall ...
Page 4
Figure 10. Normalization factor for non-saturated and saturated CTR T =50 C versus if A 2.0 Normalized to: Vce = 10V 5mA 1.5 CTRce(sat) Vce = 0.4V NCTRce 1.0 NCTRce(sat) 0.5 0 ...