DCR604SE17 Dynex Semiconductor, DCR604SE17 Datasheet - Page 6

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DCR604SE17

Manufacturer Part Number
DCR604SE17
Description
Phase Control Thyristor
Manufacturer
Dynex Semiconductor
Datasheet
DCR604SE
6/8
10000
0.001
1000
0.01
Fig.6 Maximum (limit) transient thermal impedance -
100
0.1
0.001
0.1
Conditions:
T
V
t
p
j
R
= 1ms
= 125˚C
= 50V
Rate of decay of on-state current, dI
Fig.4 Recovered charge
0.01
junction to case
1.0
Time - (s)
3 phase 120˚
Conduction
6 phase 60˚
0.1
Halfwave
d.c.
t
p
dI
T
10
/dt
Effective thermal resistance
I
Double side
T
Double side cooled
Junction to case ˚C/W
Anode side cooled
T
0.041
0.044
0.051
0.061
/dt - (A/µs)
1.0
I
RM
Q
I
I
T
T
R
Anode side
= 500A
0.25xI
= 1500A
0.074
0.077
0.084
0.093
RM
100
10
Fig.7 Surge (non-repetitive) on-state current vs time (with
V
100
10
20
15
0.1
10
GD
0.001
5
0
1
1
Table gives pulse power P
Pulse width
10ms
1ms
100
500
µs
20
25
ms
I
2
Fig.5 Gate characteristics
t
100
100
100
100
100
50
10
0.01
50% V
Frequency Hz
Gate trigger current, I
10
100
100
100
100
100
50
-
RRM
1
Duration
12.5
400
100
100
100
at T
25
-
GM
0.1
2 3 45
Cycles at 50Hz
case
in Watts
www.dynexsemi.com
125˚C)
GT
Region of certain
- (A)
10
triggering
I
1
2
t = Î
20 30
2
2
x t
50
225
200
175
150
I
FGM
10

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