DCR3990A45 Dynex Semiconductor, DCR3990A45 Datasheet - Page 3

• Manufacturer Part Number: DCR3990A45
• Description: Phase Control Thyristor
• Manufacturer: Dynex Semiconductor

DYNAMIC CHARACTERISTICS
I
Symbol
RRM
V
dV/dt
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dI/dt
Q
I
T(TO)
t
r
RR
I
t
I
gd
/I
H
T
q
L
S
DRM
SEMICONDUCTOR
Peak reverse and off-state current
Max. linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage – Low level
Threshold voltage – High level
On-state slope resistance – Low level
On-state slope resistance – High level
Delay time
Turn-off time
Stored charge
Reverse recovery current
Latching current
Holding current
Parameter
At V
To 67% V
From 67% V
Gate source 30V, 10 ,
t
1000 to 2600A at T
2600 to 9000A at T
1000 to 2600A at T
2600 to 9000A at T
V
t
T
dV
I
V
T
T
r
r
V
T
j
j
j
D
Rpeak
< 0.5µs, T
= 0.5µs, T
= 125° C,
R
= 3000A, T
= 25° C, V
= 25° C, R
DR
= 67% V
= 200V, dI/dt = 1A/µs,
RRM
/dt = 20V/µs linear
~3100V, V
/V
DRM
DRM
DRM
j
j
D
G-K
DRM
= 25° C
= 125° C
, T
, T
j
= 5V
Test Conditions
= 125° C, dI/dt – 1A/µs,
, gate source 30V, 10
= , I
case
j
to 2x I
= 125° C, gate open
R
~ 2100V
case
case
case
case
= 125° C
TM
T(AV)
= 125° C
= 125° C
= 125° C
= 125° C
= 500A, I
Repetitive 50Hz
Non-repetitive
T
= 5A
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4030
Min.
49
-
-
-
-
-
-
-
-
-
-
-
DCR3990A52
0.2115
0.1578
Max.
2000
1000
5420
0.85
0.99
300
400
750
300
59
3
3
Units
V/µs
A/µs
A/µs
m
m
mA
mA
3/10
µC
µs
µs
V
V
A
A