DCR1673SZ24 Dynex Semiconductor, DCR1673SZ24 Datasheet - Page 4

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DCR1673SZ24

Manufacturer Part Number
DCR1673SZ24
Description
Phase Control Thyristor
Manufacturer
Dynex Semiconductor
Datasheet
DCR1673SZ
DYNAMIC CHARACTERISTICS
GATE TRIGGER CHARACTERISTICS AND RATINGS
4/8
Symbol
Symbol
I
RRM
dV/dt
V
P
dI/dt
V
V
V
I
P
V
V
I
FGM
T(TO)
t
G(AV)
RGM
r
I
I
FGM
GT
FGN
gd
/I
GM
T
L
H
GT
GD
DRM
Peak reverse and off-state current
Maximum linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage
On-state slope resistance
Delay time
Latching current
Holding current
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Parameter
Parameter
At V
To 67% V
From 67% V
Gate source 1A
t
At T
At T
V
t
T
T
V
V
At V
Anode positive with respect to cathode
Anode negative with respect to cathode
Anode positive with respect to cathode
See table, gate characteristics curve
r
r
D
j
j
DRM
DRM
= 0.5 s, T
= 0.5 s, T
= 25
= 25
= 67% V
vj
vj
RRM
DRM
= 5V, T
= 5V, T
= 125
= 125
o
o
/V
C, V
C, R
T
case
DRM
DRM
o
o
DRM
j
D
j
g-k
C
C
, T
case
= 125
DRM
= 25
case
= 125
= 5V
T
=
, Gate source 20V, 10
case
j
= 25
= 125
= 25
Conditions
to 1100A
o
C
o
= 125
o
C
C
o
o
Conditions
C
C
o
C
o
C
Repetitive 50Hz
Non-repetitive
www.dynexsemi.com
Typ.
150
1.0
40
-
-
-
-
-
-
0.076
Max.
1000
Max.
0.82
0.25
0.25
250
500
750
200
500
500
150
1.5
3.5
30
30
10
5
Units
Units
V/ s
A/ s
A/ s
mA
m
mA
mA
mA
W
W
V
V
V
V
A
V
V
s

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