DCR1374SBA Dynex Semiconductor, DCR1374SBA Datasheet - Page 5

• Manufacturer Part Number: DCR1374SBA
• Description: Phase Control Thyristor
• Manufacturer: Dynex Semiconductor

CURVES
V
V
www.dynexsemi.com
GATE TRIGGER CHARACTERISTICS AND RATINGS
TM
TM
Symbol
8000
7000
6000
5000
4000
3000
2000
1000
P
= A + Bln (I
V
V
V
EQUATION
I
P
V
V
I
FGM
G(AV)
FGM
RGM
GT
FGN
GD
GM
GT
0
0.5
Fig.2 Maximum (limit) on-state characteristics
Measured under pulse conditions
T
j
= 125˚C
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
T
) + C.I
Instantaneous on-state voltage, V
T
+D. I
1.0
T
Parameter
Where
these values are valid for T
1.5
T
- (V)
A = 0.4846543
B = 8.508026 x 10
C = 0.05408984
D = 1.863019 x 10
2.0
j
= 125˚C for I
V
V
At V
Anode positive with respect to cathode
Anode negative with respect to cathode
Anode positive with respect to cathode
See table fig. 5
DRM
DRM
–5
–3
DRM
= 5V, T
5000
4000
3000
2000
1000
= 5V, T
T
0
case
0
T
= 125
case
case
Test Conditions
500A to 8000A
= 25
= 25
o
C
o
o
C
Fig.3 Power dissipation
1000
C
-
-
Mean on-state current I
2000
T(AV)
DCR1374SBA
- (A)
3000
Max.
0.25
0.25
350
150
30
30
10
3
5
d.c.
Half wave
3 phase
6 phase
Units
mA
W
W
4000
V
V
V
V
V
A
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