DCR1021SF60 Dynex Semiconductor, DCR1021SF60 Datasheet - Page 5

• Manufacturer Part Number: DCR1021SF60
• Description: Phase Control Thyristor Target Information
• Manufacturer: Dynex Semiconductor

www.dynexsemi.com
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
P
V
V
V
3000
2500
2000
1500
1000
I
P
V
V
I
FGM
500
G(AV)
FGM
RGM
GT
FGN
GD
GM
GT
0
Fig.2 Maximum (limit) on-state characteristics
1
T
j
= 125˚C
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
1.5
Instantaneous on-state voltage, V
2
Parameter
2.5
3
T
- (V)
3.5
4
V
V
At V
Anode positive with respect to cathode
Anode negative with respect to cathode
Anode positive with respect to cathode
See table fig. 7
DRM
DRM
DRM
= 5V, T
= 5V, T
T
case
= 125
case
case
Test Conditions
= 25
= 25
o
C
o
o
C
C
-
-
DCR1021SF
Max.
0.25
0.25
300
150
30
10
3
5
5
Units
mA
W
W
V
V
V
V
V
A
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