DCR1002SF Dynex Semiconductor, DCR1002SF Datasheet - Page 6

• Manufacturer Part Number: DCR1002SF
• Description: Phase Control Thyristor
• Manufacturer: Dynex Semiconductor

DCR1002SF
6/9
10000
V
100
1000
0.1
10
GD
0.001
100
1
0.1
Pulse width
Conditions: I
T
Q
10ms
1ms
j
100
200
500
S
µs
= 125˚C
is total integral stored charge
Rate of decay of on-state current, dI/dt - (A/µs)
150
150
150
150
50
20
Frequency Hz
0.01
Fig.6 Gate characteristics
T
100
150
150
150
Gate trigger current, I
50
-
Fig.4 Stored charge
= 1000A, V
1.0
400
150
125
100
25
-
Table gives pulse power P
R
0.1
= –100V,
dI/dt
GT
Max Q
10
- (A)
I
T
Region of certain
1
S
triggering
GM
Min Q
I
in Watts
RR
Q
S
S
10
100
10000
0.001
1000
Fig.6 Transient thermal impedance - junction to case
0.01
100
0.1
0.001
0.1
Conditions: I
T
j
= 125˚C
Rate of decay of on-state current, dI/dt - (A/µs)
Fig.5 Reverse recovery current
0.01
T
= 1000A, V
1.0
3 phase 120˚
6 phase 60˚
Conduction
Halfwave
Time - (s)
d.c.
R
0.1
= –100V,
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Double side
Effective thermal resistance
0.018
0.021
0.022
0.025
10
Junction to case ˚C/W
Double side cooled
Anode side cooled
1.0
Max I
Anode side
0.036
0.038
0.040
0.043
RR
Min I
RR
10
100