MT3S05T Toshiba Semiconductor, MT3S05T Datasheet - Page 2

• Manufacturer Part Number: MT3S05T
• Description: TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
• Manufacturer: Toshiba Semiconductor

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Microwave Characteristics
Electrical Characteristics
Caution
This device electrostatic sensitivity. Please handle with caution.
Note: C
Transition frequency
Insertion gain
Noise figure
Collector cut-off current
Emitter cut-off current
DC current gain
Reverse transfer capacitance
re
is measured by 3 terminal method with capacitance bridge.
Characteristics
Characteristics
(Ta = = = = 25°C)
(Ta = = = = 25°C)
|S21e|
|S21e|
Symbol
Symbol
I
I
CBO
h
EBO
C
NF
f
FE
T
re
2
2
(1)
(2)
V
V
V
V
V
V
V
V
CE
CE
CE
CE
CB
EB
CE
CB
= 1 V, I
2
= 1 V, I
= 1 V, I
= 3 V, I
= 1 V, I
= 5 V, I
= 1 V, I
= 1 V, I
Test Condition
Test Condition
C
C
C
C
E
C
C
E
= 0
= 0
= 0, f = 1 MHz
= 5 mA
= 5 mA, f = 1 GHz
= 20 mA, f = 1 GHz
= 5 mA, f = 1 GHz
= 5 mA
(Note)
Min
Min
8.5
80
¾
¾
¾
¾
¾
2
Typ.
11.5
Typ.
4.5
8.5
1.4
0.9
¾
¾
¾
MT3S05T
2002-01-23
1.25
Max
Max
140
2.2
0.1
¾
¾
¾
1
GHz
Unit
Unit
dB
dB
mA
mA
pF
¾