SG50N06DS Sirectifier Semiconductors, SG50N06DS Datasheet - Page 2

• Manufacturer Part Number: SG50N06DS
• Description: Discrete IGBTs
• Manufacturer: Sirectifier Semiconductors

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Reverse Diode (FRED)
Symbol
Symbol
R
R
C
t
C
R
C
t
t
t
Q
Q
E
E
E
I
d(off)
d(on)
d(on)
d(off)
thCK
g
Q
thJC
V
RM
I
oes
t
t
t
t
t
thJC
ies
res
off
on
off
ge
gc
R
ts
ri
fi
ri
fi
rr
F
g
I
Pulse test, t 300us, duty cycle 2%
V
I
Inductive load, T
I
V
Remarks:Switching times may increase
for V
increased R
Inductive load, T
I
V
Remarks:Switching times may increase
for V
increased R
I
Pulse test, t
I
I
T
T
C
C
C
C
F
F
F
CE
CE
CE
VJ
VJ
=I
=I
=I
=I
=60A; T
=I
=1A; -di/dt=50A/us; V
=25
=150
C90
C90
=25V; V
C90
C90
=0.8V
C90
=0.8V
CE
CE
; V
; V
; V
; V
; V
(Clamp)
(Clamp)
o
C; V
o
SG50N06S, SG50N06DS
CE
GE
GE
GE
C
CES'
CES'
VJ
GE
=150
=10V
=15V; V
=15V; L=100uH
=15V; L=100uH
GE
G
G
=0V; -di
R
; R
; R
=V
=0V; f=1MHz
300us, duty cycle d
G
G
RRM
J
J
o
=25
=R
=125
=R
Test Conditions
C
Test Conditions
0.8V
0.8V
CE
off
off
F
o
/dt=100A/us; V
=0.5V
C
=2.7
=2.7
o
CES'
CES'
C
R
=30V; T
higher T
higher T
CES
Discrete IGBTs
J
=25
J
J
2%; T
R
o
or
or
=540V
C
VJ
=25
o
C
min.
min.
25
Characteristic Values
Characteristic Values
(T
(T
J
J
=25
=25
o
o
4000
C , unless otherwise specified)
340
100
110
0.05
C , unless otherwise specified)
typ.
200
150
280
250
typ.
4.2
35
30
40
50
30
50
25
35
3
3
max.
max.
180
100
0.85
1.75
2.40
650
50
0.50
2.5
8.0
K/W
K/W
K/W
Unit
Unit
mJ
mJ
mJ
mA
nC
uA
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
S
V
A