S29GL128P SPANSION, S29GL128P Datasheet
S29GL128P
Available stocks
Related parts for S29GL128P
S29GL128P Summary of contents
Page 1
... S29GL-P MirrorBit S29GL01GP, S29GL512P, S29GL256P, S29GL128P 1 Gigabit, 512 Megabit , 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology Data Sheet (Advance Information) Notice to Readers: This document contains information on one or more products under development at Spansion Inc. The information is intended to help you evaluate this product. Do not design in this product without contacting the factory ...
Page 2
... The Advance Information designation indicates that Spansion Inc. is developing one or more specific products, but has not committed any design to production. Information presented in a document with this designation is likely to change, and in some cases, development on the product may discontinue. Spansion Inc. therefore places the following conditions upon Advance Information content: “ ...
Page 3
... Uniform 64Kword/128KByte Sector Architecture – S29GL01GP: One thousand twenty-four sectors – S29GL512P: Five hundred twelve sectors – S29GL256P: Two hundred fifty-six sectors – S29GL128P: One hundred twenty-eight sectors 100,000 erase cycles per sector typical 20-year data retention typical Performance Characteristics Max. Read Access Times (ns)* ...
Page 4
... LAA064—64 ball Fortified Ball Grid Array 4.4 TS056—56-Pin Standard Thin Small Outline Package (TSOP Additional Resources 5.1 Application Notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.2 Specification Bulletins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.3 Hardware and Software Support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.4 Contacting Spansion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6. Product Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6.1 Memory Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 7. Device Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7.1 Device Operation Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7.2 Word/Byte Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 7.3 VersatileIO 7 ...
Page 5
... List of Tables Table 2.1 Input/Output Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Table 6.1 S29GL512P Sector & Memory Address Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Table 6.2 S29GL256P Sector & Memory Address Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Table 6.3 S29GL128P Sector & Memory Address Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Table 7.1 Device Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Table 7.2 Autoselect Codes, (High Voltage Method .17 Table 7.3 Autoselect Addresses in System . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Table 7.4 Autoselect Entry in System . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 Table 7 ...
Page 6
Table 7.6 Single Word/Byte Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 7
... The ordering part number is formed by a valid combination of the following: S29GL01GP S29GL512P S29GL256P S29GL128P 10 DEVICE NUMBER/DESCRIPTION S29GL01GP, S29GL512P, S29GL256P, S29GL128P 3.0 Volt-only, 1024, 512, 256 and 128 Megabit ( 16-Bit/ 8-Bit) Page-Mode Flash Memory Manufactured MirrorBit 1 Gb S29GL01GP S29GL512P, S29GL256P, ...
Page 8
Input/Output Descriptions & Logic Symbol Table 2.1 identifies the input and output package connections provided on the device. Symbol Type A25–A0 Input DQ14–DQ0 I/O DQ15 I/O CE# Input OE# Input WE# Input V Supply CC V Supply IO V ...
Page 9
... This section shows the I/O designations and package specifications for the S29GL-P. 4.1 Related Documents The following documents contain information relating to the S29GL-P devices. Click on the title www.spansion.com download the PDF file, or request a copy from your sales office. Considerations for X-ray Inspection of Surface-Mounted Flash Integrated Circuits 4.2 Special Handling Instructions for BGA Package Special handling is required for Flash Memory products in BGA packages ...
Page 10
... RFU RFU RFU RFU RFU Do not connect S29GL-P MirrorBit Flash Family RFU on S29GL128P RFU on S29GL256P RFU on S29GL512P RFU A24 A25 BYTE# DQ15/A DQ14 DQ13 ...
Page 11
4.3 LAA064—64 ball Fortified Ball Grid Array Figure 4.2 LAA064—64ball Fortified Ball Grid Array (FBGA November 21, 2006 S29GL-P_00_A3 ( ...
Page 12
... RFU 27 RFU 56-Pin Standard TSOP (Top View) TM S29GL-P MirrorBit Flash Family S29GL128P NC on S29GL256P NC on S29GL512P 56 A24 55 A25 54 A16 53 BYTE DQ15/A-1 50 DQ7 ...
Page 13
4.4 TS056—56-Pin Standard Thin Small Outline Package (TSOP) Figure 4.3 56-Pin Thin Small Outline Package (TSOP PACKAGE TS 56 JEDEC MO-142 (B) EC SYMBOL MIN. NOM. MAX. ...
Page 14
... Additional Resources Visit www.spansion.com 5.1 Application Notes The following is a list of application notes related to this product. All Spansion application notes are available at http://www.spansion.com/support/technical_documents/application_notes.html Using the Operation Status Bits in AMD Devices Understanding Page Mode Flash Memory Devices MirrorBit™ Flash Memory Write Buffer Programming and Page Buffer Read Common Flash Interface Version 1 ...
Page 15
Product Overview The S29GL-P family consists of 1 Gb, 512 Mb, 256 Mb and 128 Mb, 3.0-volt-only, page mode Flash devices optimized for today’s embedded designs that demand a large ...
Page 16
... Secured Silicon Sector can be factory protected depending on version ordered required by command sequence, data polling, or sector protect algorithm. IN OUT Table 6.4 S29GL128P Sector & Memory Address Map Sector Sector Count Range Address Range (16-bit) SA00 0000000h - 000FFFFh 128 : ...
Page 17
7.2 Word/Byte Configuration The BYTE# pin controls whether the device data I/O pins operate in the byte or word configuration. If the BYTE# pin is set at logic ‘1’, the device ...
Page 18
Autoselect The Autoselect mode provides manufacturer and device identification, and sector protection verification, through identifier codes output from the internal register (separate from the memory array) on DQ7-DQ0. This mode is primarily intended for programming equipment to automatically match ...
Page 19
... Table 7.2 Autoselect Codes, (High Voltage Method) Description CE# OE# WE# Manufacturer ID Spansion Product Cycle 1 Cycle Cycle 3 Cycle 1 Cycle Cycle 3 Cycle 1 Cycle Cycle 3 Cycle 1 Cycle Cycle 3 Sector Group Protection Verification ...
Page 20
... The following source code example of using the autoselect function to read the manufacturer ID. Refer to the Spansion Low Level Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash memory software development guidelines. /* Here is an example of Autoselect mode (getting manufacturer ID Define UINT16 example: typedef unsigned short UINT16 ...
Page 21
... Flash address. The data for this programming operation could 16-bits wide. While the single word programming method is supported by all Spansion devices, in general it is not recommended for devices that support Write Buffer Programming. See required bus cycles and When the Embedded Program algorithm is complete, the device then returns to the read mode and addresses are no longer latched ...
Page 22
Figure 7.1 Single Word Program Write Unlock Cycles: Address 555h, Data AAh Address 2AAh, Data 55h Write Program Command: Address 555h, Data ...
Page 23
... Program Setup Program Note Base = Base Address. The following source code example of using the single word program function. Refer to the Spansion Low Level Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash memory software development guidelines. /* Example: Program Command *( (UINT16 *)base_addr + 0x555 ) = 0x00AA ...
Page 24
The write-buffer “embedded” programming operation can be suspended using the standard suspend/resume commands. Upon successful completion of the Write Buffer Programming operation, the device returns to READ mode. The Write Buffer Programming Sequence is ABORTED under any of the following ...
Page 25
... For maximum efficiency recommended that the write buffer be loaded with the highest number of words (N words) possible. The following source code example of using the write buffer program function. Refer to the Spansion Low Level Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash memory software development guidelines ...
Page 26
Write Next Word, Decrement wc – 1 RESET. Issue Write Buffer Abort Reset Command Figure 7.2 Write Buffer Programming ...
Page 27
... Sector Erase Command Unlimited additional sectors may be selected for erase; command(s) must be written within 50 µs. The following source code example of using the sector erase function. Refer to the Spansion Low Level Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash memory software development guidelines ...
Page 28
Write Unlock Cycles: Address 555h, Data AAh Address 2AAh, Data 55h Write Sector Erase Cycles: Address 555h, Data 80h Address 555h, Data AAh Address 2AAh, Data 55h Sector Address, Data 30h Select No Additional Sectors? Yes Write Additional Sector Addresses ...
Page 29
... Chip Erase Command The following source code example of using the chip erase function. Refer to the Spansion Low Level Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash memory software development guidelines. /* Example: Chip Erase Command */ /* Note: Cannot be suspended *( (UINT16 *)base_addr + 0x555 ) = 0x00AA ...
Page 30
... Example: Erase suspend command */ *( (UINT16 *)base_addr + 0x000 ) = 0x00B0; Cycle 1 The following source code example of using the erase resume function. Refer to the Spansion Low Level Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash memory software development guidelines. /* Example: Erase resume command */ *( (UINT16 *)sector_addr + 0x000 ) = 0x0030 ...
Page 31
... Example: Program suspend command */ *( (UINT16 *)base_addr + 0x000 ) = 0x00B0; Cycle 1 The following source code example of using the program resume function. Refer to the Spansion Low Level Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash memory software development guidelines. /* Example: Program resume command */ *( (UINT16 *)base_addr + 0x000 ) = 0x0030 ...
Page 32
... Software Functions and Sample Code The following are C source code examples of using the unlock bypass entry, program, and exit functions. Refer to the Spansion Low Level Driver User’s Guide (available soon on www.spansion.com) for general information on Spansion Flash memory software development guidelines. ...
Page 33
Cycle 1 Program Setup Command 2 Program Command /* Example: Unlock Bypass Program Command /* Do while in Unlock Bypass Entry Mode! *( (UINT16 *)base_addr + 0x555 ) = 0x00A0; *( ...
Page 34
DQ7. Depending on when the system samples the DQ7 output, it may read the status or valid data. Even if the device has completed the program or erase operation and DQ7 has valid data, the data ...
Page 35
7.8.2 DQ6: Toggle Bit I Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase ...
Page 36
not possible to temporarily prevent reads to other memory sectors, then it is recommended ...
Page 37
Status Embedded Program Algorithm Standard Mode Embedded Erase Algorithm Program Program- Suspend Suspend Mode Read Erase- Suspend Erase Read Suspend Mode Erase-Suspend-Program (Embedded Program) Write-to- Buffer Notes 1. DQ5 switches to ...
Page 38
... Reset Command Note Base = Base Address. The following source code example of using the reset function. Refer to the Spansion Low Level Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash memory software development guidelines. /* Example: Reset (software reset of Flash state machine (UINT16 *)base_addr + 0x000 ) = 0x00F0 ...
Page 39
Advanced Sector Protection/Unprotection The Advanced Sector Protection/Unprotection feature disables or enables programming or erase operations in any or all sectors and can be implemented through software and/or hardware methods, which ...
Page 40
Lock Register As shipped from the factory, all devices default to the persistent mode when power is applied, and all sectors are unprotected, unless otherwise chosen through the DYB ordering option (see on page 5). The device programmer or ...
Page 41
There are no means for individually erasing a specific PPB and no specific sector address is required for this operation. 9. Exit command must be issued after the execution which ...
Page 42
Dynamic Protection Bits Dynamic Protection Bits are volatile and unique for each sector and can be individually modified. DYBs only control the protection scheme for unprotected sectors that have their PPBs cleared (erased to “1”). By issuing the DYB ...
Page 43
There is no means to verify what the password is after it is set. 6. The Password Mode Lock Bit, once set, prevents reading the 64-bit password on the data ...
Page 44
Write Unlock Cycles: Address 555h, Data AAh Address 2AAh, Data 55h Enter Lock Register Command: Address 555h, Data 40h Program Lock Register Data Address XXXh, Data A0h Address XXXh*, Data PD Perform Polling Algorithm (see Write Operation Status Yes PASS. ...
Page 45
8.5 Advanced Sector Protection Software Examples Table 8.2 Sector Protection Schemes: DYB, PPB and PPB Lock Bit Combinations Unique Device PPB Lock Bit 0 = locked 1 = unlocked Any Sector ...
Page 46
Write Pulse “Glitch Protection” Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle. 8.6.4 Power-Up Write Inhibit If WE# = CE# = RESET rising edge of WE#. ...
Page 47
... Customers may opt to have their code programmed through the Spansion programming services. Spansion programs the customer's code, with or without the random ESN. The devices are then shipped from the Spansion factory with the Secured Silicon Sector permanently locked. Contact your local representative for details on using Spansion programming services. ...
Page 48
... Software Functions and Sample Code The following are C functions and source code examples of using the Secured Silicon Sector Entry, Program, and exit commands. Refer to the Spansion Low Level Driver User’s Guide (available soon on www.spansion.com) for general information on Spansion Flash memory software development guidelines. ...
Page 49
Cycle Unlock Cycle 1 Unlock Cycle 2 Exit Cycle 3 Exit Cycle 4 Note Base = Base Address. /* Example: SecSi Sector Exit Command */ *( (UINT16 *)base_addr + 0x555 ) ...
Page 50
Operating Ranges Ambient Temperature (TA), Industrial (I) Device Supply Voltages V Supply Voltages IO Notes 1. Operating ranges define those limits between which the functionality of the device is guaranteed. 2. See also Ordering Information on page 3. For ...
Page 51
Output Load Output Load Capacitance, C (including jig capacitance) Input Rise and Fall Times Input Pulse Levels Input timing measurement reference levels (See Note) Output timing measurement reference levels Note If ...
Page 52
DC Characteristics Table 11.2 S29GL-P DC Characteristics (CMOS Compatible) Parameter Parameter Description Symbol (Notes) I Input Load Current ( Input Load Current LIT I Output Leakage Current Active Read Current (1) CC1 CC ...
Page 53
11.7 AC Characteristics 11.7.1 S29GL-P Read-Only Operations Parameter Description JEDEC Std. (Notes Read Cycle Time AVAV Address to Output Delay AVQV ACC t t Chip Enable ...
Page 54
Amax:A2 A2:A0 (See Note) Data Bus CE# OE# Note Figure 11.6 shows word mode. Addresses are A2:A-1 for byte mode. 11.7.2 Hardware Reset (RESET#) Parameter JEDEC Std. RESET# Pin Low (During Embedded Algorithms Ready Read Mode or Write ...
Page 55
RY/BY# CE#, OE# RESET# RY/BY# CE#, OE# RESET# Note CE#, OE# and WE# must be at logic high during Reset Time. Parameter Reset Low Time from rising edge ...
Page 56
CE# RESET# 11.7.3 S29GL-P Erase and Program Operations Table 11.6 S29GL-P Erase and Program Operations Parameter JEDEC Std. Description t t Write Cycle Time (Note 1) AVAV Address Setup ...
Page 57
Program Command Sequence (last two cycles Addresses 555h CE# OE# WE Data RY/BY VCS Notes program address program data, ...
Page 58
Figure 11.11 Chip/Sector Erase Operation Timings Erase Command Sequence (last two cycles Addresses 2AAh CE Data 55h RY/BY# t VCS V CC Notes sector address (for Sector ...
Page 59
Figure 11.13 Toggle Bit Timings (During Embedded Algorithms) Addresses CE# t OEH WE# OE Valid Data DQ2 and DQ6 RY/BY# Note A = Valid address; not required for DQ6. ...
Page 60
S29GL-P Alternate CE# Controlled Erase and Program Operations Table 11.7 S29GL-P Alternate CE# Controlled Erase and Program Operations Parameter Description JEDEC Std. (Notes Write Cycle Time (Note 1) AVAV Address Setup Time AVWL AS ...
Page 61
Figure 11.15 Alternate CE# Controlled Write (Erase/Program) Operation Timings 555 for program 2AA for erase Addresses WE# OE# CE Data t RH RESET# RY/BY# Notes ...
Page 62
... S29GL256P Chip Erase Time S29GL512P S29GL01GP Total Write Buffer Time (Note 3) Total Accelerated Write Buffer Programming Time (Note 3) S29GL128P S29GL256P Chip Program Time (Note 4) S29GL512P S29GL01GP Notes 1. Typical program and erase times assume the following conditions: 25°C, 3 Under worst case conditions of -40° ...
Page 63
... Appendix This section contains information relating to software control or interfacing with the Flash device. For additional information and assistance regarding software, see the Spansion web site at www.spansion.com. 12.1 Command Definitions Writing specific address and data commands or sequences into the command register initiates device operations. Tables 12.1– ...
Page 64
The Reset command is required to return to reading array data when device is in the autoselect mode DQ5 goes high (while the device is providing status data). 8. See Table 7.2 on page 17 for device ...
Page 65
Table 12.2 S29GL-P Sector Protection Command Definitions, x16 Command (Notes) Command Set Entry Program (6) Read (6) Command Set Exit (7, 8) Command Set Entry Password Program (9) Password Read (10) ...
Page 66
Table 12.3 S29GL-P Memory Array Command Definitions, x8 Command (Notes) Read (6) 1 Reset (7) 1 Manufacturer ID 4 Device ID (8) 4 Sector Protect Verify (10) 4 Secure Device Verify (11) 4 CFI Query (12) 1 Program Write to ...
Page 67
Table 12.4 S29GL-P Sector Protection Command Definitions, x8 Command (Notes) Command Set Entry 3 Bits Program (6) 2 Read (6) 1 Command Set Exit ( Command Set Entry 3 ...
Page 68
... The system must write the reset command to return the device to reading array data. The following source code example of using the CFI Entry and Exit functions. Refer to the Spansion Low Level Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash memory software development guidelines ...
Page 69
Addresses (x16) Addresses (x8) 1Bh 36h 1Ch 38h 1Dh 3Ah 1Eh 3Ch 1Fh 3Eh 20h 40h 21h 42h 22h 44h 23h 46h 24h 48h 25h 4Ah 26h 4Ch Addresses (x16) Addresses ...
Page 70
Table 12.8 Primary Vendor-Specific Extended Query Addresses (x16) Addresses (x8) 40h 80h 41h 82h 42h 84h 43h 86h 44h 88h 45h 8Ah 46h 8Ch 47h 8Eh 48h 90h 49h 92h 4Ah 94h 4Bh 96h 4Ch 98h 4Dh 9Ah 4Eh 9Ch ...
Page 71
... Please note that Spansion will not be liable to you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure ...