RM50C1A-XXS Mitsubishi Electric Semiconductor, RM50C1A-XXS Datasheet - Page 3

• Manufacturer Part Number: RM50C1A-XXS
• Description: MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE
• Manufacturer: Mitsubishi Electric Semiconductor

PERFORMANCE CURVES
1000
10
800
600
400
200
10
10
10
10
10
10
10
REVERSE RECOVERY CHARACTERISTICS
–1
MAXIMUM FORWARD CHARACTERISTIC
0
7
5
3
2
7
5
3
2
7
5
3
2
ALLOWABLE SURGE (NON-REPETITIVE)
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
0
0.2
2
1
0
10
1
V
I
T
0
F
R
j
=50A
2
=25°C
=150/300V
2
3
Q
1.0
T
T
4
FORWARD VOLTAGE (V)
rr
j
j
FORWARD CURRENT
VS. –di/dt (TYPICAL)
=25°C
=150°C
3
5
CONDUCTION TIME
7
(CYCLES AT 60Hz)
4
10
5
–di/dt (A/ s)
1.8
1
7
2
10
3
4
5
2.6
7
20
10
30
2
2
3.4
40
3
50
4
t
rr
5
70
I
7
rr
100
4.2
10
10
10
10
10
3
1
0
–1
–2
MITSUBISHI FAST RECOVERY DIODE MODULES
10
MAXIMUM TRANSIENT THERMAL IMPEDANCE
MEDIUM POWER, HIGH FREQUENCY USE
10
10
10
1.0
0.8
0.6
0.4
0.2
REVERSE RECOVERY CHARACTERISTICS
–1
0
7
5
3
2
7
5
3
2
7
5
3
2
10
2
1
0
10
10
VS. FORWARD CURRENT (TYPICAL)
–3
V
di/dt=–100A/µs
0
0
R
2 3 4 57
2
2
=150/300V
Q
RM50DA/CA/C1A-XXS
3
3
rr
T
T
4
FORWARD CURRENT (A)
4
j
j
=25°C
=150°C
5
5
(JUNCTION TO CASE)
7
7
10
10
10
1
–2
1
2
2
2
TIME (s)
3
3
3
4
4
4
5
5
5
7
7
10
10
–1
2
2
2
t
I
rr
INSULATED TYPE
rr
3
3
4
4
5
5
7
7
10
10
10
10
10
10
3
1
0
–1
–2
Feb.1999