P6503NJ Niko, P6503NJ Datasheet - Page 3

• Manufacturer Part Number: P6503NJ
• Description: N&P-Channel Enhancement Mode Field Effect Transistor
• Manufacturer: Niko

NIKO-SEM
1
2
3
REMARK: THIS PRODUCT MARKED WITH “50YWW”
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Forward Voltage
Reverse Recovery Time
Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%.
Independent of operating temperature.
Pulse width limited by maximum junction temperature.
2
2
Marking Description:
5 - N+P MOSFET
0 - Serial Number
Y - Year
W - Week
50YWW
1
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
2
2
N- & P-Channel Enhancement Mode
Field Effect Transistor
t
t
V
d(on)
d(off)
t
t
t
SD
rr
r
f
I
D
I
D
I
≅ -1A, V
I
F
F
≅ 1A, V
= -0.9A, dl
= 0.9A, dl
V
V
I
DS
I
F
DS
F
= -0.9A, V
= 0.9A, V
= -15V, R
= 15V, R
GS
GS
N-Channel
P-Channel
3
= 10V, R
= -10V, R
F
F
/dt = 100A / µS
/dt = 100A / µS
GS
L
GS
L
= 15Ω
= 15Ω
= 0V
= 0V
GEN
GEN
= 6Ω
= 6Ω
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
C
= 25 °C)
P6503NJ
12
11
12
14
40
40
7
8
7
8
JUL-08-2004
TSOPJW-8
-1.2
1.2
11
12
18
18
18
21
11
12
80
80
nS
nS
V