LTC660 Linear Technology, LTC660 Datasheet - Page 2

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LTC660

Manufacturer Part Number
LTC660
Description
100mA CMOS Voltage Converter
Manufacturer
Linear Technology
Datasheet

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ABSOLUTE
(Note 1)
LTC660
Supply Voltage (V
Input Voltage on Pins 1, 6, 7
Output Short-Circuit Duration to GND
Power Dissipation.............................................. 500mW
Operating Temperature Range .................... 0 C to 70 C
Storage Temperature Range ................. – 65 C to 150 C
Lead Temperature (Soldering, 10 sec).................. 300 C
ELECTRICAL CHARACTERISTICS
2
V
SYMBOL PARAMETER
I
I
R
f
The
temperature range; all other limits and typicals are at T
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: Connecting any input terminal to voltages greater than V
than ground may cause destructive latch-up. It is recommended that no
inputs from source operating from external supplies be applied prior to
power-up of the LTC660.
Note 3: The output resistance is a combination of internal switch
resistance and external capacitor ESR. To maximize output voltage and
efficiency, keep external capacitor ESR < 0.2 .
S
OUT
OSC
OUT
+
(Note 2) ............................ – 0.3V < V
(Note 5) ............................................................. 1 sec
= 5V, C1 and C2 = 150 F, Boost = Open, C
denotes specifications which apply over the full operating
Supply Voltage
Supply Current
Output Current
Output Resistance
Oscillator Frequency
Power Efficiency
Voltage Conversion Efficiency
Oscillator Sink or Source Current
W
+
MAXIMUM
) .................................................. 6V
W W
CONDITIONS
R
No Load
V
I
Boost = Open
Boost = V
R
R
I
No Load
Boost = Open
Boost = V
RATINGS
L
L
L
OUT
L
L
= 100mA (Note 3)
= 100mA to GND
= 1k
= 1k Connected Between V
= 500 Connected Between V
OSC
More Negative Than – 4V
IN
A
= 0pF, T
= 25 C.
< (V
+
+
U
(Note 4)
+
Inverter, LV = Open
Inverter, LV = GND
Doubler, LV = V
Boost = Open
Boost = V
+
+ 0.3V)
A
or less
= 25 C, unless otherwise noted.
+
+
and V
PACKAGE/ORDER
Consult Factory for Industrial and Military grade parts.
OUT
Note 4: f
fixture capacitance loading. The 0pF frequency is correlated to this 100pF
test point, and is intended to simulate the capacitance at Pin 7 when the
device is plugged into a test socket and no external capacitor is used.
Note 5: OUT may be shorted to GND for 1 sec without damage, but
shorting OUT to V
for temperatures above 85 C, OUT must not be shorted to GND or V
even instantaneously, or device damage may result.
OUT
and GND
BOOST
OUT
CAP
CAP
GND
T
T
OSC
JMAX
JMAX
+
8-LEAD PLASTIC SOIC
1
2
3
4
is tested with C
8-LEAD PLASTIC DIP
= 100 C,
= 100 C,
N8 PACKAGE
S8 PACKAGE
TOP VIEW
+
may damage the device and should be avoided. Also,
JA
JA
= 100 C/W (N)
= 150 C/W (S)
OSC
8
7
6
5
= 100pF to minimize the effects of test
V
OSC
LV
V
+
OUT
MIN
100
1.5
2.5
96
92
99
INFORMATION
3
U
S8 PART MARKING
99.96
TYP
0.08
0.23
6.5
10
80
98
96
88
1.1
5.0
ORDER PART
LTC660CN8
LTC660CS8
NUMBER
W
MAX
660
5.5
5.5
5.5
0.5
10
3
UNITS
+
U
,
kHz
kHz
mA
mA
mA
%
%
%
%
V
V
V
A
A

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