LTC4001-1 Linear Technology, LTC4001-1 Datasheet - Page 3

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LTC4001-1

Manufacturer Part Number
LTC4001-1
Description
2A Synchronous Buck Li-Ion Charger
Manufacturer
Linear Technology
Datasheet
www.DataSheet4U.com
ELECTRICAL CHARACTERISTICS
temperature range, otherwise specifi cations are at T
specifi ed.
SYMBOL PARAMETER
f
D
R
R
t
V
ΔV
V
V
I
I
V
V
V
V
t
t
t
I
V
V
V
ΔV
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: Operation with current limited wall adapters is allowed down to the
undervoltage lockout threshold.
Note 3: The LTC4001E-1 is guaranteed to meet performance specifi ca-
tions from 0°C to 85°C. Specifi cations over the – 40°C to 85°C operating
temperature range are assured by design, characterization and correlation
with statistical process controls.
OSC
TIMER
IDET
CHRG
RB
RECHRG
TRIKL
SS
EN
PROG
IDET
CHRG
OL
OH
RECHRG
COLD
HOT
DIS
PFET
NFET
EN
DIS
Oscillator Frequency
Maximum Duty Factor
R
R
Timer Accuracy
Enable Input Threshold Voltage
Enable Input Hysteresis
PROG Pin Voltage
IDET Pin Voltage
IDET Threshold
CHRG Pin Weak Pull-Down
Current
CHRG Pin Output Low Voltage
FAULT Pin Output Low Voltage
FAULT Pin Output High Voltage
Recharge Battery Threshold
Voltage
Recharge Filter Time Constant
Recharge Time
Low-Battery Trickle Charge Time
Soft-Start Ramp Current
NTC Pin Cold Temperature Fault
Threshold
NTC Pin Hot Temperature Fault
Threshold
NTC Disable Threshold (Falling)
NTC Disable Hysteresis
DS(ON)
DS(ON)
of P-Channel MOSFET
of N-Channel MOSFET
CONDITIONS
Measured from PV
Measured from SW to PGND
C
V
R
R
R
V
I
1mA Load
1mA Load
V
Percent of Total Charge Time
Percent of Total Charge Time, V
Measured Using BATSENS and GNDSENS Pins
V
and GNDSENS Pins
From NTC to GNDSENS Pin
From NTC to GNDSENS Pin
From NTC to GNDSENS Pin
From NTC to GNDSENS Pin
CHRG
TIMER
EN
CHRG
FLOAT
BAT
PROG
IDET
IDET
Rising Threshold
Falling Threshold
Falling Threshold
Rising Threshold
Rising
< V
= 549Ω
= 549Ω
= 5mA
= 1V
= 549Ω
– V
= 0.22μF
FLOAT
RECHRG
A
= 25°C. V
– 100mV, V
V
IN
BAT
The
to SW
Falling
l
IN
BAT
denotes the specifi cations which apply over the full operating
= 5V, V
Across BATSENS
BAT
Note 4: T
sipation P
Note 5: This IC includes overtemperature protection that is intended to
protect the device during momentary overload. Junction temperature will
exceed 125°C when overtemperature protection is active. Continuous
operation above the specifi ed maximum operating junction temperature
my impair device reliability.
< 2.8V,
EN
T
J
= T
= 0V, R
A
J
D
is calculated from the ambient temperature T
+ (P
according to the following formula:
PROG
D
• 37°C/W)
= 549Ω, R
V
0.015 •
INSENSE
MIN
150
1.3
0.6
4.6
IDET
15
50
4
6
= 549Ω, unless otherwise
0.74 V
0.72 V
0.29 V
0.30 V
V
V
0.02 •
INSENSE
0.01 •
INSENSE
1.213
1.213
12.8
TYP
127
121
±10
100
200
100
1.5
0.8
0.2
30
50
25
LTC4001-1
INSENSE
INSENSE
INSENSE
INSENSE
A
V
and power dis-
0.025 •
INSENSE
MAX
100
250
135
1.7
0.4
0.4
50
16
1
UNITS
40011fa
3
MHz
mV
mA
mV
ms
μA
μA
%
%
%
%
V
V
V
V
V
V
V
V
V
V
V
V

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