LTC3417 Linear Technology, LTC3417 Datasheet - Page 3

• Manufacturer Part Number: LTC3417
• Description: Dual Synchronous 1.4A/800mA 4MHz Step-Down DC/DC Regulator
• Manufacturer: Linear Technology

ELECTRICAL CHARACTERISTICS
The
V
SYMBOL
I
f
I
I
R
R
I
I
V
T
R
V
V
I
I
VTL
VTH
VTH
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC3417 is guaranteed to meet specified performance from
0°C to 85°C. Specifications over the –40°C to 85°C operating ambient
temperature range are assured by design, characterization and correlation
with statistical process controls.
Note 3: The LTC3417 is tested in feedback loop which servos V
midpoint for the error amplifier (V
the error amplifier (V
Note 4: Total supply current is higher due to the internal gate charge being
delivered at the switching frequency.
S
OSC
LIM1
LIM2
SW1(LKG)
SW2(LKG)
RUN1
PHASE
PGOOD
IN
DS(ON)1
DS(ON)2
UVLO
PGOOD
RUN1
PHASE
MODE
= 3.6V unless otherwise specified. (Note 2)
MODE
FREQ
●
, I
, V
, I
denotes specifications which apply over the full operating temperature range, otherwise specifications are at T
RUN2
MODE
RUN2
,
PARAMETER
Input DC Supply Current (Note 4)
Oscillator Frequency
Peak Switch Current Limit on SW1 (1.4A)
Peak Switch Current Limit on SW2 (800mA)
SW1 Top Switch On-Resistance (1.4A)
SW1 Bottom Switch On-Resistance
SW2 Top Switch On-Resistance (800mA)
SW2 Bottom Switch On-Resistance
Switch Leakage Current SW1 (1.4A)
Switch Leakage Current SW2 (800mA)
Undervoltage Lockout Threshold
Threshold for Power Good. Percentage
Deviation from V
(Typically 0.8V)
Power Good Pull-Down On-Resistance
RUN1, RUN2 Threshold
PHASE Threshold High-CMOS Levels
PHASE Threshold Low-CMOS Levels
RUN1, RUN2, PHASE and MODE
Leakage Current
MODE Threshold Voltage Low
MODE Threshold Voltage High
FREQ Threshold Voltage High
Active Mode
Half Active Mode (V
Half Active Mode (V
Both Channels in Sleep Mode
Shutdown
ITH2
= 0.6V).
FB
ITH1
Steady State
RUN2
RUN1
= 0.6V) and V
= 0V, 1.4A Only)
= 0V, 800mA Only) V
FB2
to the midpoint for
FB1
CONDITIONS
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
FB1
RUN1
FB1
FB2
FB1
RUN1
RUN1
FREQ
FREQ
FREQ
IN1
IN1
IN2
IN2
IN1
IN2
IN1
IN1
FB1
FB1
IN
to the
= 6V, PV
, V
, V
= 3.6V (Note 5)
= 3.6V (Note 5)
= 3.6V (Note 5)
= 3.6V (Note 5)
= 6V, V
= 6V, V
= V
= 0.75V, V
= 0.75V, V
= V
or V
or V
: R
: Resistor (Note 6)
= V
IN2
IN2
= V
= V
= V
FB2
FB2
T
FB2
FB2
IN
RUN2
RUN2
RUN2
Ramping Down
Ramping Up
= 143k
= 0.75V, V
= 1V, V
ITH1
ITH2
IN
Ramping Up, V
Ramping Down, V
= 3V
= V
MODE
MODE
= V
= 0V
= 0V, V
= 0V, V
Note 5: Switch on-resistance is guaranteed by design and test correlation
on the DHC package and by final test correlation on the FE package.
Note 6: Variable frequency operation with resistor is guaranteed by design
but not production tested and is subject to duty cycle limitations.
Note 7: This IC includes overtemperature protection that is intended to
protect the device during momentary overload conditions. Junction
temperature will exceed 125°C when overtemperature protection is active.
Continuous operation above the specified maximum operating junction
temperature may impair device reliability.
Note 8: T
dissipation, P
IN
IN
MODE
LTC3417EDHC: T
LTC3417EFE: T
= V
= V
MODE
RUN1
RUN2
IN
IN
= V
J
, V
, V
is calculated from the ambient temperature, T
MODE
= V
IN
RUN1
RUN2
= 0V
= 0V
,
D
MODE
, according to the following formula:
IN
,
= 0V
= V
= V
J
= 0V
= T
J
IN
IN
= T
A
+ (P
A
+ (P
D
• 38°C/W)
D
• 43°C/W)
V
V
V
IN
IN
IN
0.85
1.95
MIN
1.2
1.8
1.9
0.3
1
–0.5
–0.5
–0.5
www.DataSheet4U.com
0.088
0.084
2.25
0.16
0.15
0.01
0.01
2.07
2.12
0.85
0.01
TYP
400
260
260
125
160
0.1
1.5
1.2
–6
–6
1
LTC3417
A
A
MAX
= 25°C.
1.25
2.25
600
400
400
250
300
1.8
2.2
1.5
0.5
0.5
, and power
1
4
1
1
1
UNITS
3417fb
3
MHz
MHz
MHz
µA
µA
µA
µA
µA
µA
µA
µA
%
%
Ω
Ω
Ω
Ω
Ω
A
A
V
V
V
V
V
V
V
V