LTC1481 Linear Technology, LTC1481 Datasheet - Page 6

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LTC1481

Manufacturer Part Number
LTC1481
Description
Ultra-Low Power RS485 Transceiver with Shutdown
Manufacturer
Linear Technology
Datasheet

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APPLICATIO S I FOR ATIO
LTC1481
SWITCHI G TI E WAVEFOR S
Basic Theory of Operation
Traditionally, RS485 transceivers have been designed
using bipolar technology because the common-mode
range of the device must extend beyond the supplies and
the device must be immune to ESD damage and latch-up.
Unfortunately, most bipolar devices draw a large amount
of supply current, which is unacceptable for the numerous
applications that require low power consumption. The
LTC1481 is a CMOS RS485/RS422 transceiver which
features ultra-low power consumption without sacrificing
ESD and latch-up immunity.
The LTC1481 uses a proprietary driver output stage,
which allows a common-mode range that extends beyond
the power supplies while virtually eliminating latch-up and
providing excellent ESD protection. Figure 9 shows the
LTC1481 output stage while Figure 10 shows a conven-
tional CMOS output stage.
When the conventional CMOS output stage of Figure 10
enters a high impedance state, both the P-channel (P1)
and the N-channel (N1) are turned off. If the output is then
driven above V
6
A – B
RO
RO
RE
RO
–V
V
3V
0V
5V
0V
V
V
OD2
OD2
U
OH
OL
CC
or below ground, the P+/N-well diode
U U
W
W
Figure 8. Receiver Enable and Disable Times
Figure 7. Receiver Propagation Delays
t
PHL
W
1.5V
U
0V
1.5V
1.5V
t
t
1.5V
ZL(SHDN)
ZH(SHDN)
f = 1MHz, t
OUTPUT NORMALLY HIGH
OUTPUT NORMALLY LOW
f = 1MHz, t
, t
, t
ZL
ZH
(D1) or the N+/P-substrate diode (D2) respectively will
turn on and clamp the output to the supply. Thus, the
output stage is no longer in a high impedance state and is
not able to meet the RS485 common-mode range require-
ment. In addition, the large amount of current flowing
through either diode will induce the well-known CMOS
latch-up condition, which could destroy the device.
The LTC1481 output stage of Figure 9 eliminates these
problems by adding two Schottky diodes, SD3 and SD4.
The Schottky diodes are fabricated by a proprietary modi-
fication to the standard N-well CMOS process. When the
output stage is operating normally, the Schottky diodes
are forward biased and have a small voltage drop across
them. When the output is in the high impedance state and
is driven above V
D1 or D2 still turns on, but SD3 or SD4 will reverse bias and
prevent current from flowing into the N-well or the sub-
strate. Thus the high impedance state is maintained even
with the output voltage beyond the supplies. With no
minority carrier current flowing into the N-well or sub-
strate, latch-up is virtually eliminated under power-up or
power-down conditions.
r
r
10ns, t
OUTPUT
10ns, t
INPUT
f
f
10ns
10ns
t
t
LZ
HZ
CC
t
PLH
or below ground, the parasitic diode
1.5V
0.5V
0.5V
0V
1.5V
LTC1481 • F08
LTC1481 • F07

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