BZW04-6V4 General Semiconductor, BZW04-6V4 Datasheet - Page 4

• Manufacturer Part Number: BZW04-6V4
• Description: TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR
• Manufacturer: General Semiconductor

0.01
100
100
RATINGS AND CHARACTERISTIC CURVES BZW04P5V8 THRU BZW04-376
1.0
0.1
0.1
150
10
10
1.00
0.75
0.50
0.25
100
1
0.1 s
50
0
0
0
0
0
FIG. 7-TYPICAL REVERSE LEAKAGE CHARACTERISTICS
T
L
FIG. 5 - STEADY STATE POWER DERATING CURVE
A
FIG. 1 - PEAK PULSE POWER RATING CURVE
1.6 x 1.6 x 0.040"
(40 x 40 x 1
=25°C
COPPER HEAT SINKS
= 0.375”(9.5mm)
t
25
LEAD LENGTH
d
1.0 s
t
MEASURED at
DEVICES
STAND-OFF
VOLTAGE, V
r
100
PEAK VALUE
I
=10 sec.
FIG. 3 - PULSE WAVEFORM
PPM
V
1.0
(BR),
mm
50
t
T
d
, PULSE WIDTH, sec.
.)
L,
BREAKDOWN VOLTAGE, VOLTS
LEAD TEMPERATURE,°C
10 s
t, TIME, ms
WM
HALF VALUE - I
75
10/1000 sec. WAVEFORM
AS DEFINED BY R.E.A.
200
2.0
100
60 H
RESISTIVE OR INDUCTIVE LOAD
T
PULSE WIDTH (t
DEFINED as the POINT
WHERE the PEAK
CURRENT DECAYS
to 50% of I
A
100 s
=25°C
Z
PP
2
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG. 3
T
125
300
3.0
A
=25°C
PP
1.0ms
150
d
) is
4.0
400
175
10ms
200
500
100,000
100
10,000
50
40
30
20
10
75
50
25
0
1000
0
0
1
10
FIG. 6 - MAXIMUM NON-REPETITIVE FORWARD
1.0
25
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
MEASURED at
STAND-OFF
VOLTAGE, V
SURGE CURRENT UNIDIRECTIONAL
V
FIG. 2 - PULSE DERATING CURVE
(BR)
T
NUMBER OF CYCLES AT 60 H
A
50
, AMBIENT TEMPERATURE, °C
, BREAKDOWN VOLTAGE, VOLTS
WM
UNIDIRECTIONAL
75
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
T
10
J
=T
100
10
J
max.
MEASURED at
ZERO BIAS
125
T
f=1.0 MHz
Vsig=50mVp-p
J
150
=25°C
Z
100 200
175
100
200