TBS6416B4E M-tec, TBS6416B4E Datasheet
TBS6416B4E
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TBS6416B4E Summary of contents
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... Banks synchronous DRAM GENERAL DESCRIPTION The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized 1,048,576 words by 16 bits, fabricated with M’tec high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications ...
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... M .tec (Top View) PIN CONFIGURATION Revision_1.1 54Pin TSOP (II) (400mil x 875mil) (0.8 mm Pin pitch) 2 TBS6416B4E Sep. 2000 ...
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... Power for input buffers and logic circuit inside DRAM. Ground for input buffers and logic circuit inside DRAM. Separated power from , used for output buffers to improve noise. VCC Separated ground from , used for output buffers to improve noise. VSS No connection 3 TBS6416B4E Sep. 2000 ...
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... Address Buffer ADD /CS Commend / RAS Decoder / CAS & Clock Buffer CLK CKE Revision_1.1 Bank Select Data Input Row Decoder 1Mx16 & 1Mx16 Refresh Counter 1Mx16 1Mx16 Column Decoder Column Buffer Latency & Burst Length Programming Register 4 TBS6416B4E Output Buffer DQ Sep. 2000 ...
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... OUT VCC, VCC STG 0V Symbol Min VCC, VCC TBS6416B4E Value -1.0 ~ 4.6 -1.0 ~ 4.6 -55 ~ +150 70°C) A Typ Max Unit 3.3 3.6 V 3.0 VCC + 1.5 uA Unit V V ℃ Note ...
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... Input signals are stable Page burst I CC4 2Banks activated 2CLK CCD (min) I CC5 RC≧ RC CKE≦0.2V I CC6 6 TBS6416B4E-7G 100 2 = ∞ 2 (min (Max ∞ 5 (min (Max 150 140 160 1 TBS6416B4E Unit Note Sep. 2000 ...
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... 2 CL 1.5 CKS t 1 CKH t 1.5 CMS t 1 CMH t REF t 15 RSC 7 TBS6416B4E Unit Max 100K ns ns CLK ns 1000 ns 1000 5 Sep. 2000 ...
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... Revision_1 ITEM TBS6416B4E detail of lead end MILLIMETERS INCHES 22.62 MAX. 0.891 MAX. 0.91 MAX. 0.036 MAX. 0.80 (T.P.) 0.031 (T.P.) +0.08 0.32 0.013±0.003 –0.07 0.10±0.05 0.004±0.002 1.20 MAX. ...