M57962K Powerex Power Semiconductors, M57962K Datasheet - Page 4

• Manufacturer Part Number: M57962K
• Description: Hybrid Integrated Circuit
• Manufacturer: Powerex Power Semiconductors


Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
M57962K
Hybrid IC for IGBT Gate Driver
Application Circuit
CONTROL
CONTROL
FAULT
FAULT
B1
B1
+5V
+5V
14
14
V CC
V EE
V CC
+
+
+
Component Selection:
Design
V CC , V EE
R G
C1, C2
D1
C trip
B1
R F
C F
Notes:
(1) Power supply decoupling capacitors C1 and C2 should be connected as close as possible to the pins of the
(2) C trip should be connected as close as possible to the pins of the gate driver to avoid noise pick-up.
(3) All zener diodes 1W, all resistors 0.25W unless otherwise noted.
(4) When R G is less than 3 times the minimum value, Collector Voltage surges may affect Gate Drive.
13
13
gate driver and must be sized to have appropriate ESR and ripple current capability for the IGBT being driven.
2.7k
8.2V
Description
+15V/-10V Typical, See data sheet for usable limits
Adjust for application requirements. See IGBT module application notes
for recommendations and power rating
10µF-100µF 25V low impedance electrolytic
Ultra fast recovery t rr <100ns, High voltage V rrm >V ces (IGBT)
0-200pF adjusts desaturation trip time (t trip )
CMOS Buffer 74HC04 or similar – Must actively pull high to maintain noise immunity
390Ω - 510Ω (Usually unnecessary)
100pF – 470pf (Usually unnecessary)
PS2501
PS2501
10
10
9
9
M57962K
M57962K
4.7k
4.7k
8
8
+
+
6
6
C1
C1
5
5
+
+
4
4
C2
C2
3
3
R G
R G
+
+
2
2
C trip
C trip
1
1
C F
C F
18V
18V
18V
18V
30V
30V
R F
R F
D1
D1
G
G
E
E
IGBT
MODULE
IGBT
MODULE
E
E
C
C
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