7MBP50TEA060 ETC, 7MBP50TEA060 Datasheet

7MBP50TEA060

Manufacturer Part Number

7MBP50TEA060

Description

Econo IPM series IGBT-IPM

Manufacturer

ETC

Datasheet

1.7MBP50TEA060.pdf (9 pages)

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Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

7MBP50TEA060

Manufacturer:

FUJI

Quantity:

1 000

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HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

Part Number:

7MBP50TEA060

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Company:

Bonase Electronics (HK) Co., Limited

Part Number:

7MBP50TEA060-50

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334

Company:

Meier Automation Equipment Co., Limited

Part Number:

7MBP50TEA060-50

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FUJI/富士电机

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7MBP50TEA060

Econo IPM series

Item

Bus voltage

Collector-Emitter voltage *1

Supply voltage of Pre-Driver *4

Input signal voltage *5

Input signal current

Alarm signal voltage *6

Alarm signal current *7

Junction temperature

Operating case temperature

Storage temperature

Solder temperature *8

Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.)

Screw torque

Note

· Temperature protection provided by directly detecting the junction

· Low power loss and soft switching

· High performance and high reliability IGBT with overheating protection

· Higher reliability because of a big decrease in number of parts in

temperature of the IGBTs

built-in control circuit

Absolute maximum ratings(at Tc=25°C unless otherwise specified)

Features

Maximum ratings and characteristics

*1 : Vces shall be applied to the input voltage between terminal P and U or ‚u or W, N and U or V or W

*2 : 125

*4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13

*6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13.

*7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19.

Collector current

*3 : Pc=125

Collector power dissipation One transistor *3

Forward current diode

*5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13.

*8 : Immersion time 10

Pc=125

°C

/FWD Rth(j-c)/(Ic x VF MAX)=125/1.263/(50 x 2.6) x 100=76.1%

°C

/IGBT Rth(j-c)=125/0.87=144W [Inverter]

/IGBT Rth(j-c)=125/0.87=144W [Breake]

1sec.

Mounting (M5)

1ms

Surge

Duty=76.1% *2

Short operating

Symbol

-I

ALM

opr

stg

sol

DC(surge)

CES

ALM

iso

200

Min.

-20

-40

-0.5

Rating

600V / 50A 7 in one-package

AC2500

Vcc+0.5

450

500

400

600

100

144

150

100

125

260

Vcc

Max.

3.5

Unit

°C

N·m

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7MBP50TEA060 Summary of contents

Page 1

... Econo IPM series Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection · Higher reliability because of a big decrease in number of parts in ...

Page 2

... Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.) Main circuit Item Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of Diode Turn-on time Turn-off time Reverse recovery time ...

Page 3

... Vin Vin Vin(th) Vin(th /Vin /Vin Vge (Inside IPM ) Vge (Inside IPM ) Fault (Inside IPM Fault (Inside IPM ) ) normal normal /ALM /ALM ALM ALM VccU VccU P P 20k 20k IPM IPM DC DC VinU VinU U U 15V ...

Page 4

... Block diagram VccU VccU VinU VinU 3 3 ALMU ALMU 1.5k 1.5k ALM ALM GNDU GNDU 1 1 VccV VccV 8 8 VinV VinV 7 7 ALMV ALMV 1.5k 1.5k ALM ALM GNDV GNDV 5 5 VccW VccW 12 12 VinW VinW 11 11 ALMW ...

Page 5

... Characteristics Control circuit characteristics (Respresentative) P ower sup ply current vs. Switching frequency Tc=1 25°C 60 P-sid e N-sid Switch ing frequency : Hz) Under voltage vs. Junction temp erature tion (°C) Alarm hold tim e vs ...

Page 6

... Main circuit characteristics (Respresentative) Collector curren t vs. Collector-Em itter voltag llector-Em itter vo lta Vce (V) Collector curren t vs. Collector-Em itter voltag llector-Em itter vo lta Vce (V) Forward current vs. Forward voltage ...

Page 7

... Switching Loss vs.Collector Current Edc=30 0V,Vcc=15 V,Tj=25° Collec tor cu rren (A) Reversed b iased safe operating area Vcc=15V, RBS O A(Rep etitive 100 200 300 Collector-Em itter voltag e : Vce (V) Power derating for IG BT ...

Page 8

... Switching tim e vs. Collector current E dc=300V,Vcc=15V,Tj=25 10 000 1 000 100 Col lector cu rren (A) Reverse recovery characteristics ard cu rren t:IF(A) ° trr,Irr vs.IF trr125°C trr2 5° C Irr12 5°C Irr2 5° C ...

Page 9

... Characteristics Dynamic Brake Characteristics (Respresentative) Collector current vs. Collector-Em itter voltage Tj=25° llector-Em itter vo lta Vce (V) Transient therm al resistance 0.01 0. lse width :Pw (sec) Power derating for IG BT (per device ...

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