6MBI75UA-120 FE, 6MBI75UA-120 Datasheet

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6MBI75UA-120

Manufacturer Part Number
6MBI75UA-120
Description
IGBT Module U-Series
Manufacturer
FE
Datasheet

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Part Number:
6MBI75UA-120
Manufacturer:
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Part Number:
6MBI75UA-120
Quantity:
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6MBI75UA-120
IGBT Module U-Series
· High speed switching
· Voltage drive
· Low inductance module structure
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector current
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation voltage between terminal and copper base *1
Screw Torque
*
*
*
*
*
Thermal resistance
Contact Thermal resistance
Items
1 :
2 :
3
4
5
:Biggest internal terminal resistance among arm.
Thermal resistance characteristics
: This is the value which is defined mounting on the additional cooling fin with thermal compound
to base plate when isolation test will be done.
:Recommendable value : 2.5 to 3.5 N·m(M5)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Two thermistor terminals should be connected together, each other terminals should be connected together and shorted
All terminals should be connected together when isolation test will be done.
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Maximum ratings and characteristics
Features
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip*
Resistance
B value
Mounting *3
between thermistor and others *2
4
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)*
I
I
V
V
(terminal)
V
(chip)
C
t
t
t
t
t
V
(terminal)
V
(chip)
t
R lead
Symbols
· Inverter for Motor drive
· AC and DC Servo drive amplifier
CES
GES
on
r(i)
off
f
r
rr
R
B
GE(th)
CE(sat)
CE(sat)
ies
F
F
Applications
5
IGBT
FWD
With thermal compound
Conditions
Conditions
V
V
V
V
V
V
I
V
R
V
T=25°C
T=100°C
T=25/50°C
C
I
I
F
F
GE
CE
CE
GE
CE
CC
GE
GE
G
=75A
=75A
=75A
=9.1
=20V, I
=0V, V
=0V, V
=15V, I
=10V, V
=±15V
=0V
=600V
Symbol
V
V
I
I
-I
-I
P
T
T
V
-
C
C
stg
C
C
C
j
CES
GES
iso
p
pulse
GE
1200V / 75A 6 in one-package
CE
C
C
GE
=75mA
=75A
=1200V
=±20V
=0V, f=1MHz
Conditions
Continuous
AC:1min.
1 device
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1ms
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Characteristics
Min.
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Characteristics
Min.
3305
465
4.5
Typ.
0.05
Typ.
5000
3375
495
Rating
-40 to +125
6.5
2.05
2.30
1.75
2.00
8
0.25
0.12
0.03
0.36
0.07
2.10
2.30
1.80
2.00
4.1
1200
+150
2500
±20
100
200
150
150
390
3.5
75
75
Max.
0.32
0.73
3450
Max.
200
520
1.0
8.5
2.40
2.10
1.20
0.60
1.00
0.30
2.50
2.20
0.35
Unit
Unit
V
V
A
W
°C
VAC
N·m
°C/W
°C/W
°C/W
Unit
mA
nA
V
V
nF
µs
V
µs
m

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6MBI75UA-120 Summary of contents

Page 1

... IGBT Module U-Series Features · High speed switching · Voltage drive · Low inductance module structure Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector current Collector Power Dissipation Junction temperature ...

Page 2

... Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 200 VGE=20V 150 100 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 200 150 100 Collector-Emitter voltage : VCE [V] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V Hz, Tj= 25°C 100 ...

Page 3

... Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=9.1Ω, Tj= 25°C 1000 100 Collector current : Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=75A, VGE=±15V, Tj= 25°C 10000 1000 toff ton 100 Gate resistance : Rg [ Ω ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=75A, VGE=± ...

Page 4

... Forward current vs. Forward on voltage (typ.) 125 T j=25°C 100 Forward on voltage : Transient thermal resistance (max.) 10.000 1.000 0.100 0.010 0.001 0.001 0.010 Pulse width : Pw [ sec ] chip 1000 T j=125°C 100 100 FWD 10 IGBT 0.1 0.100 1.000 IGBT Module Reverse recovery characteristics (typ.) Vcc=600V, VGE=± ...

Page 5

... Outline Drawings, mm M636 Equivalent Circuit Schematic 25,26 25, 27,28 27, shows reference dimension 23,24 23,24 21,22 21, IGBT Module 15,16 15, 19,20 19,20 13,14 13,14 ...

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