6MBI150U4B-120 Fuji Electric, 6MBI150U4B-120 Datasheet - Page 9

• Manufacturer Part Number: 6MBI150U4B-120
• Description: IGBT MODULE
• Manufacturer: Fuji Electric

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100.0
400
300
200
100
10.0
400
300
200
100
1.0
0.1
0
0
0
0
0
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Capacitance vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage : VCE [ V ]
VGE=0V, f=1MHz, Tj=25
1
1
VGE=15V / chip
VGE=20V
10
Tj=25
2
2
Tj=25
o
C / chip
15V
o
C
3
3
Tj=125
12V
20
o
C
o
4
4
C
Cies
Cres
Coes
10V
8V
30
5
5
10
400
300
200
100
8
6
4
2
0
0
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
0
5
0
0
Collector current vs. Collector-Emitter voltage (typ.)
MS5F6013
Collector-Emitter voltage : VCE [ V ]
200
1
10
Gate-Emitter voltage : VGE [ V ]
Vcc=600V, Ic=150A, Tj=25
Dynamic Gate charge (typ.)
Gate charge : Qg [ nC ]
Tj=125
Tj=25
2
VGE=20V
400
15
o
o
C / chip
C / chip
VCE
VGE
3
15V
600
20
o
C
H04-004-03a
Ic=300A
Ic=150A
Ic=75A
4
9
13
10V
8V
12V
800
25
5