2MBI200N-120 Fuji, 2MBI200N-120 Datasheet
2MBI200N-120
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2MBI200N-120 Summary of contents
Page 1
IGBT MODULE ( N series ) n n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current ...
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Collector current vs. Collector-Emitter voltage T =25°C j 500 V =20V,15V,12V,10V GE 400 300 200 100 Collector-Emitter voltage : V Collector-Emitter vs. Gate-Emitter voltage T =25° ...
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Switching time vs =600V, I =200A, V =±15V 1000 100 10 Gate resistance : R Forward current vs. Forward voltage 500 T =125°C 25°C j 400 300 200 100 ...
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... E 25°C off E 125° 25° 300 400 0 [A] C Fuji Electric (UK) Ltd. Commonwealth House 2 Chalkhill Road Hammersmith London W6 8DW, UK Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60 Capacitance vs. Collector-Emitter voltage T =25° Collector-Emitter Voltage : V [V] ...