2MBI150NE-120 Fuji, 2MBI150NE-120 Datasheet - Page 3

• Manufacturer Part Number: 2MBI150NE-120
• Description: IGBT MODULE ( N series )
• Manufacturer: Fuji

0,001
1000
0,01
100
300
200
100
0,1
0,001
0
0
Vcc=600V, Ic=150A, V
Forward current vs. Forward voltage
1
Transient thermal resistance
Gate resistance : RG [ ]
Forward voltage : V
Pulse width : PW [sec]
Switching time vs. RG
0,01
Tj=125°C
2
V
G E
= O V
10
G E
25°C
3
=±15V, Tj=25°C
F
0,1
[V]
4
Diode
IGBT
toff
ton
tr
tf
5
1
1400
1200
1000
1000
100
800
600
400
200
800
600
400
200
10
0
0
0
0
0
+VGE=15V, -V
200
Reversed biased safe operating area
S C S O A
(non-repetitive pulse)
RBSOA (Repetitive pulse)
Collector-Emitter voltage : V
Reverse recovery characteristics
500
Dynamic input characteristics
Gate charge : Qg
400
100
Forward current : I
G E
trr, Irr vs. I
<15V, Tj<125°C, R
600
Tj=25°C
1000
800
F
200
[nC]
F
[A]
1500
C E
1000
Irr
25°C
Vcc=400V
G
[V]
>5.6
trr
25°C
trr
125°C
Irr
125°C
600V
800V
1200
2000
300
10
25
15
20
5
0