FP412L100 Siemens Semiconductor Group, FP412L100 Datasheet - Page 2

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FP412L100

Manufacturer Part Number
FP412L100
Description
Differential Magneto Resistor
Manufacturer
Siemens Semiconductor Group
Datasheet
1) Corresponding to diagram
2) Corresponding to diagram
3) 1 T = 1 Tesla = 10
4)
The differential magneto resistor FP 412 L 100 is a magnetically variable resistor in L-
type InSb/NiSb semiconductor material. The MR is glued onto a ferrite substrate and is
supplied in a "MICROPACK" copper/polyimide film package. The basic resistance of
each of the magneto resistors is 100
external magnetic field or can be biased by a permanent magnet and actuated by a soft
iron target.
Maximum ratings
Parameter
Operating temperature
Storage temperature
Power dissipation
Supply voltage
Thermal conductivity
–attached to heatsink
–in still air
Characteristics (
Basic resistance
(
Center symmetry
Relative resistance change
R
B
B
Temperature coefficient
B
B
B
Semiconductor Group
I
0
=
=
= 0 T
=
=
=
1 mA,
R
M
0.3 T
1 T
0.3 T
1 T
01-3
=
, at
B
R
------------------------------- -
01
= 0 T)
B
R
2)
= 0 T
01
2
4
(
4)
1)
T
B
Gauss
3)
2
R
A
= 0.2 T)
02
= 25 C)
P
V
3
tot
IN
=
=
100% for
f(T
f
(
T
case
case
)
)
R
01-2
>
. The series coupled MRs are actuated by an
Symbol
T
T
P
V
G
G
R
M
R
TC
R
02-3
A
stg
tot
IN
01-3
B
2
th case
th A
/
R
R
0
Value
– 40 / + 175
– 40 / + 185
1000
10
2
150 250
> 1.7
> 7
– 0.16
– 0.38
– 0.54
20
10
FP 412 L 100
Unit
mW
V
mW/K
%
%/K
%/K
%/K
C
C

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