ALD110802 Advanced Linear Devices, ALD110802 Datasheet - Page 2

• Manufacturer Part Number: ALD110802
• Description: QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY
• Manufacturer: Advanced Linear Devices

ALD110802/ALD110902
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage,
Gate-Source voltage,
Power dissipation
Operating temperature range PA, SA, PC, SC package
Storage temperature range
Lead temperature, 10 seconds
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V (or open) V- = GND
CAUTION:
Notes:
Parameter
Gate Threshold Voltage
Offset Voltage
V GS(th)1 -V GS(th)2
Offset VoltageTempco
GateThreshold Voltage Tempco
On Drain Current
Forward Transconductance
Transconductance Mismatch
Output Conductance
Drain Source On Resistance
Drain Source On Resistance
Mismatch
Drain Source Breakdown
Voltage
Drain Source Leakage Current
Gate Leakage Current
Input Capacitance
Transfer Reverse Capacitance
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
1
Consists of junction leakage currents
ESD Sensitive Device. Use static control procedures in ESD controlled environment.
V
1
V
GS
DS
1
Symbol
V GS(th)
V OS
TC ∆ VOS
TC∆ VGS(th)
I DS (ON)
G FS
∆G FS
G OS
R DS (ON)
∆R DS (ON)
BV DSX
I DS (OFF)
I GSS
C ISS
C RSS
t on
t off
T A = 25
°
C unless otherwise specified
Min
0.18
ALD110802 / ALD110902
Advanced Linear Devices
500
+1.6
12.0
Typ
-1.7
68
10
10
10
10
60
0.20
2
5
0.0
3.0
1.4
1.8
0.5
2.5
0.1
3
100
Max
10
30
0.22
4
1
Unit
V
mV
µV/ °C
mV/ °C
mA
mmho
%
µmho
Ω
%
V
pA
nA
pA
nA
pF
pF
ns
ns
dB
-65°C to +150°C
0°C to +70°C
500 mW
+260°C
I DS =1µA
V DS = 0.1V
V DS1 = V DS2
I D = 1µA
I D = 20µA, V DS = 0.1V
I D = 40µA
V GS = + 9.7V
V GS = + 4.2V
V DS = + 5V
V GS = +4.2V
V DS = + 9.2V
V GS = +4.2V
V DS = +9.2V
V DS = 0.1V
V GS = +4.2V
I DS = 1.0µA
V GS = -0.8V
V GS = -0.8V
V DS =10V, T A = 125°C
V DS = 0V V GS = 10V
T A =125°C
V + = 5V R L = 5KΩ
V + = 5V R L = 5KΩ
f = 100KHz
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Test Conditions
10.6V
10.6V
2