TPD4112K Toshiba Semiconductor, TPD4112K Datasheet - Page 11

• Manufacturer Part Number: TPD4112K
• Description: Intelligent Power Device High Voltage Monolithic Silicon Power IC
• Manufacturer: Toshiba Semiconductor

Description of Protection Function
Over current setting value
(1)
(2)
(3)
PWM reference voltage
by making Duty of PWM less than 100%, or turning a motor from the outside compulsorily, and
creating edge to a hall sensor output. In order to enable the reboot after a lock as a system, it is
necessary to restrict and obtain on motor specification so that the maximum of Duty may become less
than 100%.
Over current protection
The IC incorporates the over current protection circuit to protect itself against over current at startup
or when a motor is locked. This protection function detects voltage generated in the current detection
resistor connected to the IS pin. When this voltage exceeds V
output, which is on, temporarily shuts down after a mask period, preventing any additional current
from flowing to the IC. The next PWM ON signal releases the shutdown state.
Under voltage protection
The IC incorporates the under voltage protection circuit to prevent the IGBT from operating in
unsaturated mode when the V
When the V
shut down regardless of the input. This protection function has hysteresis. When the V
V typ.) reaches 0.5 V higher than the shutdown voltage, the IC is automatically restored and the
IGBT is turned on again by the input.
When the V
When the V
turned on again by the input signal.
Thermal shutdown
The IC incorporates the thermal shutdown circuit to protect itself against the abnormal state when
its temperature rises excessively.
When the temperature of this chip rises due to external causes or internal heat generation and the
internal setting TSD, all IGBT outputs shut down regardless of the input. This protection function
has hysteresis (∆TSD = 50°C typ.). When the chip temperature falls to TSD − ∆TSD, the chip is
automatically restored and the IGBT is turned on again by the input.
Because the chip contains just one temperature detection location, when the chip heats up due to the
IGBT, for example, the differences in distance from the detection location in the IGBT (the source of
the heat) cause differences in the time taken for shutdown to occur. Therefore, the temperature of the
chip may rise higher than the thermal shutdown temperature when the circuit started to operate.
Output current
Triangle wave
CC
BS
BS
UVR (= 10.5 V typ.) reaches 0.5 V higher than the shutdown voltage, the IGBT is
supply voltage drops (V
power supply falls to the IC internal setting (V
t
OFF
Over current shutdown
Duty OFF
CC
voltage or the V
t
ON
BS
UVD = 10 V typ.), the high-side IGBT output shuts down.
Duty ON
11
Mask period + t
BS
voltage drops.
R
OFF
CC
= 0.5 V (typ.), the high-side IGBT
UVD = 11 V typ.), all IGBT outputs
t
ON
TPD4112K
Retry
CC
2005-11-04
UVR (= 11.5