TPD4105K Toshiba Semiconductor, TPD4105K Datasheet - Page 9

• Manufacturer Part Number: TPD4105K
• Description: High Voltage Monolithic Silicon Power IC
• Manufacturer: Toshiba Semiconductor

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Electrical Characteristics
Operating power supply voltage
Current dissipation
Input voltage
Input current
Output saturation voltage
FRD forward voltage
BSD forward voltage
Regulator voltage
Current limiting voltage
Current limiting dead time
Thermal shutdown temperature
Thermal shutdown hysteresis
V
V
V
V
DIAG saturation voltage
Output-on delay time
Output-off delay time
Dead time
FRD reverse recovery time
CC
CC
BS
BS
under-voltage protection
under-voltage protection recovery
under-voltage protection
under-voltage protection recovery
Characteristics
(Ta = 25°C)
I
V
V
V
V
V
V
V
I
V
BS (OFF)
Symbol
BS (ON)
ΔTSD
CC
CC
BS
BS
DIAGsat
CEsat
F (BSD)
V
CEsat
t
TSD
V
V
V
V
dead
I
V
I
V
REG
V
t
t
I
I
Dt
BB
CC
t
on
off
CC
IH
F
BB
IL
F
UVD
UVR
rr
IH
IL
UVD
UVR
R
H
L
H
L
V
V
V
V
V
V
V
V
V
V
I
I
I
V
V
V
I
V
V
V
V
F
F
F
DIAG
BB
CC
BS
BS
IN
IN
IN
IN
CC
CC
CC
CC
CC
BB
BB
BB
BB
= 1.5 A, high side
= 1.5 A, low side
= 500 μA
= “H”
= “L”
= 5Ｖ
= 0 V
= 450 V
= 15 V, high side ON
= 15 V, high side OFF
= 280 V, V
= 280 V, V
= 280 V, V
= 280 V, V
= 15 V
= 15 V, I
= 15 V, I
= 15 V, I
= 15 V
= 15 V
9
= 5 mA
Test Condition
C
C
O
CC
CC
CC
CC
= 1.5 A, high side
= 1.5 A, low side
= 30 mA
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
= 15 V, I
= 15 V, I
= 15 V, I
= 15 V, I
C
C
C
C
= 1.5 A
= 1.5 A
= 1.5 A
= 1.5 A
13.5
0.46
10.5
135
Min
3.5
6.5
2.3
8.5
1.4
50
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
8
TPD4105K
Typ.
11.5
280
230
200
200
0.8
2.3
2.3
1.6
1.6
0.8
0.5
3.3
9.5
1.2
1.0
15
⎯
⎯
⎯
⎯
⎯
⎯
50
11
⎯
⎯
7
9
2007-05-10
16.5
0.54
12.5
10.5
Max
450
410
370
150
100
185
0.5
1.5
2.0
2.0
1.2
7.5
4.4
9.5
0.5
⎯
⎯
12
⎯
⎯
5
3
3
3
3
Unit
mA
μA
μA
μs
℃
℃
μs
μs
μs
ns
V
V
V
V
V
V
V
V
V
V
V
V