LMN400E01 Diodes Incorporated, LMN400E01 Datasheet - Page 2

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LMN400E01

Manufacturer Part Number
LMN400E01
Description
400 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND ESD PROTECTED N-MOSFET
Manufacturer
Diodes Incorporated
Datasheet
DS30750 Rev. 4 - 2
Sub-Component Device:
ESD Protected N-Channel MOSFET (Q2)
Maximum Ratings:
Sub-Component Device: Pre-Biased PNP Transistor (Q1)
Collector-Base Voltage
Collector-Emitter Voltage
Supply Voltage
Input Voltage
Output Current
Drain-Source Voltage
Drain Gate Voltage (R
Gate-Source Voltage
Drain Current (Page 1: Note 3)
Continuous Source Current
Characteristic
GS
Pulsed (tp <10 uS, Duty Cycle <1%)
Characteristic
1MOhm)
@ T
A
Continuous
Pulsed (tp<50 uS)
Continuous (V
= 25 C unless otherwise specified
@ T
A
= 25 C unless otherwise specified
gs
= 10V)
Symbol
www.diodes.com
V
V
V
V
CBO
CEO
I
C
cc
in
2 of 10
Symbol
V
V
V
DGR
DSS
GSS
I
I
D
S
+5 to -6
Value
-400
-50
-50
-50
Value
+/-20
+/-40
300
800
300
60
60
Unit
mA
V
V
V
V
Unit
LMN400E01
mA
mA
V
V
V

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